US4086109A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the epitaxial growth of III-V compounds at homogeneous low temperature utilizing a single flat temperature zone
Assignee: US Philips Corp
•
Filing: 1977-03-04
•
Granted: 1978-04-25
•
Expires: 1997-03-04
Abstract
Abstract The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere specifically, by utilizing a neutral gas in the initial transport reaction and subsequently introducing hydrogen into the gaseous mixture in the immediate vicinity of the substrate. The temperature in the epitaxial space is homogeneous and low (600° C) and the qualities of the deposited layers are considerably improved.
Inventors
- 👤 Jean-Philippe Hallais
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:21
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
108 words
A method for the epitaxial deposition of an AIII-BV compound on a monocrystalline substrate from the vapor phase comprising: in a single flat temperature zone, forming as a first gaseous phase a hydrogen free mixture of a halide of a BV element and a neutral gas, reacting said first gaseous phase with an AIII element in the liquid phase so as to form a second gaseous phase, said first and second gaseous phases being formed remote from said substrate, and then mixing said second gaseous phase with hydrogen in the immediate vicinity of said substrate to thereby deposit and epitaxial layer of said AIII-BV compound on said substrate.
Claim 2
Independent Claim
108 words
A method for the epitaxial deposition of an AIII-BV compound on a monocrystalline substrate from the vapor phase comprising: in a single flat temperature zone, forming as a first gaseous phase a hydrogen free mixture of a halide of a BV element and a neutral gas, reacting said first gaseous phase with an AIII element in the liquid phase so as to form a second gaseous phase, said first and second gaseous phases being formed remote from said substrate, and then mixing said second gaseous phase with hydrogen in the immediate vicinity of said substrate to thereby deposit and epitaxial layer of said AIII-BV compound on said substrate.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, characterized in that the neutral gas is selected from the group consisting of helium and nitrogen.
Claim 4
Dependent Claim
24 words
A method as claimed in claim 1, characterized in that the temperature of the said gaseous phase is chosen between 500° and 800° C.
Claim 5
Dependent Claim
16 words
A method as claimed in claim 3, characterized in that the temperature is about 600° C.
Claim 6
Dependent Claim
16 words
A method as claimed in claim 1, characterized in that the AIII-BV compound is gallium arsenide.
Claim 7
Dependent Claim
24 words
The method of claim 1 including the step of introducing a dopant of one conductivity type into at least one of said gaseous phases.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein a multiplicity of layers of an AIII-BV compound are deposited on said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-24 | 1981-10-24 | 1982-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-24 | 1985-10-24 | 1986-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-24 | 1989-10-24 | 1990-04-25 | $7700.00 | Window Closed / Lapsed |