US5749974A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemical vapor deposition and reactor therefor
Assignee: Shin-Etsu Handotai Co Ltd
•
Filing: 1995-07-13
•
Granted: 1998-05-12
•
Expires: 2015-07-13
Abstract
Abstract A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
Inventors
- 👤 Hitoshi Habuka
- 👤 Masanori Mayuzumi
- 👤 Naoto Tate
- 👤 Masatake Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:35
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/08; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C30B25/14
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
251 words
A chemical vapor deposition reactor comprising: a cold-wall type reaction chamber for growing a silicon crystalline thin film, said reaction chamber being equipped with a reactant gas inlet at an upstream end and a reactant gas outlet at a downstream end for flowing a reactant gas horizontally in one direction through said reaction chamber; means for supporting a semiconductor substrate in said reaction chamber so that a main surface of the semiconductor substrate is aligned horizontally; means for heating the semiconductor substrate to a temperature for growing a silicon crystalline film on the semiconductor substrate, said temperature being sufficient to create natural convection between the semiconductor substrate and internal side walls of the reaction chamber due to temperature differences therebetween; wherein the semiconductor substrate is arranged within a distance W measured from a leading edge of the semiconductor substrate which leading edge is located at a most upstream portion of the reaction chamber, along a direction toward said gas outlet, and the semiconductor substrate is arranged in a location in which a W/G ratio is 15 or larger so that a rotation number of a vertical vortex due to natural convection is suppressed to 1 or less within the distance W measured from a leading edge of the semiconductor substrate and, wherein W is an internal width of said reaction chamber and G is a distance between the main surface of the at least one semiconductor substrate and a ceiling of said reaction chamber above the at least one semiconductor substrate.
Claim 2
Dependent Claim
251 words
A chemical vapor deposition reactor comprising: a cold-wall type reaction chamber for growing a silicon crystalline thin film, said reaction chamber being equipped with a reactant gas inlet at an upstream end and a reactant gas outlet at a downstream end for flowing a reactant gas horizontally in one direction through said reaction chamber; means for supporting a semiconductor substrate in said reaction chamber so that a main surface of the semiconductor substrate is aligned horizontally; means for heating the semiconductor substrate to a temperature for growing a silicon crystalline film on the semiconductor substrate, said temperature being sufficient to create natural convection between the semiconductor substrate and internal side walls of the reaction chamber due to temperature differences therebetween; wherein the semiconductor substrate is arranged within a distance W measured from a leading edge of the semiconductor substrate which leading edge is located at a most upstream portion of the reaction chamber, along a direction toward said gas outlet, and the semiconductor substrate is arranged in a location in which a W/G ratio is 15 or larger so that a rotation number of a vertical vortex due to natural convection is suppressed to 1 or less within the distance W measured from a leading edge of the semiconductor substrate and, wherein W is an internal width of said reaction chamber and G is a distance between the main surface of the at least one semiconductor substrate and a ceiling of said reaction chamber above the at least one semiconductor substrate.
Claim 3
Dependent Claim
40 words
A chemical vapor deposition reactor according to claim 1, wherein said means for supporting the at least one semiconductor substrate in said reaction chamber positions the at least one semiconductor substrate at least 3 cm from internal side walls thereof.
Claim 4
Dependent Claim
212 words
A chemical vapor deposition reactor comprising: a cold-wall type reaction chamber for growing a silicon crystalline thin film, said reaction chamber being equipped with a reactant gas inlet at an upstream end and a reactant gas outlet at a downstream end for flowing a reactant gas horizontally in one direction through said reaction chamber; means for supporting a semiconductor substrate in said reaction chamber so that a main surface of the semiconductor substrate is aligned horizontally, means for heating the semiconductor substrate to a temperature for growing a silicon crystalline film on the semiconductor substrate, said temperature being sufficient to create natural connection between the semiconductor substrate and internal side walls of the reaction chamber due to temperature differences therebetween; wherein an internal length of said reaction chamber as measured along a direction which extends between said gas inlet and said gas outlet is greater than W, and a W/H ratio of said reaction chamber is 15 or larger, so that a rotation number of a vertical vortex due to natural convection is suppressed to 1 or less within the distance W measured from a leading edge of the semiconductor substrate, and wherein W is an internal width of said reaction chamber and H is an internal height of said reaction chamber.
Claim 5
Dependent Claim
212 words
A chemical vapor deposition reactor comprising: a cold-wall type reaction chamber for growing a silicon crystalline thin film, said reaction chamber being equipped with a reactant gas inlet at an upstream end and a reactant gas outlet at a downstream end for flowing a reactant gas horizontally in one direction through said reaction chamber; means for supporting a semiconductor substrate in said reaction chamber so that a main surface of the semiconductor substrate is aligned horizontally, means for heating the semiconductor substrate to a temperature for growing a silicon crystalline film on the semiconductor substrate, said temperature being sufficient to create natural connection between the semiconductor substrate and internal side walls of the reaction chamber due to temperature differences therebetween; wherein an internal length of said reaction chamber as measured along a direction which extends between said gas inlet and said gas outlet is greater than W, and a W/H ratio of said reaction chamber is 15 or larger, so that a rotation number of a vertical vortex due to natural convection is suppressed to 1 or less within the distance W measured from a leading edge of the semiconductor substrate, and wherein W is an internal width of said reaction chamber and H is an internal height of said reaction chamber.
Claim 6
Dependent Claim
40 words
A chemical vapor deposition reactor according to claim 3, wherein said means for supporting the at least one semiconductor substrate in said reaction chamber positions the at least one semiconductor substrate at least 3 cm from internal side walls thereof.
References Cited (Backward Citations)
US3338209A
Cited
US3805736A
Cited
US4533820A
Cited
US4689247A
Cited
US5044315A
Cited
US4846102A
Cited
US5261960A
Cited
US5525157A
Cited
US5458918A
Cited
US5411590A
Cited
US5221556A
Cited
US5244694A
Cited
US5194401A
Cited
WO1991003075A1
Cited
US5077875A
Cited
FR2661554A1
Cited
US5085887A
Cited
US5587019A
Cited
US5370738A
Cited
US5336327A
Cited
US5576059A
Cited
US5405446A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-11 | 2001-11-10 | 2002-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-11 | 2005-11-10 | 2006-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-11 | 2009-11-10 | 2010-05-12 | $7700.00 | Window Closed / Lapsed |