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US5525157A Expired / Lapsed US ⏱️ 0.0 years remaining

Gas injectors for reaction chambers in CVD systems

Assignee: ASM America Inc
•
Filing: 1995-08-11
•
Granted: 1996-06-11
•
Expires: 2015-08-11
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Abstract

Abstract The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where-the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90 for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.

Inventors

  • 👤 Mark R. Hawkins
  • 👤 McDonald Robinson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:45
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C23; C23C; C23C16/00; C23C16/44; C23C16/455

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 192 words
Chemical vapor deposition apparatus comprising: walls forming a reaction chamber defining a generally horizontal longitudinal axis for processing semiconductor wafers; a single rotatable susceptor horizontally positioned in the chamber sized to support a single wafer, the susceptor being centrally located on a lateral chamber axis; a gas input port for supplying process gas into said chamber adjacent an upstream edge of said susceptor with the gas flowing across a flat surface of the wafer in a direction in substantial alignment with the longitudinal axis, said port extending laterally, substantially across the width of the chamber; a gas exhaust port for withdrawing gas from said chamber adjacent a downstream edge of the susceptor opposite from the input port; and gas injector apparatus including a plurality of laterally spaced outlets which control gas flow leading to said inlet port, in a manner to provide a non-uniform gas velocity profile having a greater velocity in a central region and a lesser velocity in laterally outward regions so that greater reaction gas flow is provided across the center of the wafer than across the lateral edges of the wafer to provide uniform deposition on the wafer.
Claim 2
Dependent Claim 192 words
Chemical vapor deposition apparatus comprising: walls forming a reaction chamber defining a generally horizontal longitudinal axis for processing semiconductor wafers; a single rotatable susceptor horizontally positioned in the chamber sized to support a single wafer, the susceptor being centrally located on a lateral chamber axis; a gas input port for supplying process gas into said chamber adjacent an upstream edge of said susceptor with the gas flowing across a flat surface of the wafer in a direction in substantial alignment with the longitudinal axis, said port extending laterally, substantially across the width of the chamber; a gas exhaust port for withdrawing gas from said chamber adjacent a downstream edge of the susceptor opposite from the input port; and gas injector apparatus including a plurality of laterally spaced outlets which control gas flow leading to said inlet port, in a manner to provide a non-uniform gas velocity profile having a greater velocity in a central region and a lesser velocity in laterally outward regions so that greater reaction gas flow is provided across the center of the wafer than across the lateral edges of the wafer to provide uniform deposition on the wafer.
Claim 3
Dependent Claim 20 words
The deposition apparatus of claim 1, wherein said outlets are smaller at said outward regions than at said central region.
Claim 4
Dependent Claim 14 words
The deposition apparatus of claim 1, wherein said outlets are apertures in a wall.
Claim 5
Dependent Claim 11 words
The deposition apparatus of claim 1, wherein said outlet are circular.
Claim 6
Dependent Claim 17 words
The deposition apparatus of claim 1, wherein said outlets are separated by a plurality of spacer legs.
Claim 7
Dependent Claim 17 words
The deposition apparatus of claim 1, wherein said outlets are in the form of horizontally elongated slots.
Claim 8
Dependent Claim 32 words
The deposition apparatus of claim 1, including a conduit connecting a source of gas to said injector apparatus, a value in said conduit controlling the flow of gas to the injector apparatus.

References Cited (Backward Citations)

US3293074A Cited
US3338209A Cited
US3516811A Cited
US3750620A Cited
US3785853A Cited
US4096822A Cited
US4033286A Cited
US4434742A Cited
US4499853A Cited
US4583492A Cited
JPS60189928A Cited
US4756272A Cited
US4839145A Cited
US5000113A Cited
US4807562A Cited
US4825809A Cited
US4836138A Cited
US5261960A Cited
US4846102A Cited
US5044315A Cited
US5221556A Cited
US5244694A Cited
US5411590A Cited
US5458918A Cited
JPH0230119A Cited
US4949669A Cited
US4920918A Cited
US5186756A Cited
EP0473067A1 Cited
US5269847A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-06-11 1999-12-11 2000-06-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-06-11 2003-12-11 2004-06-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-06-11 2007-12-11 2008-06-11 $7700.00 Window Closed / Lapsed

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