US5576059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Depositing polysilicon films having improved uniformity and apparatus therefor
Assignee: Applied Materials Inc
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Filing: 1995-06-07
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Granted: 1996-11-19
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Expires: 2015-06-07
Abstract
Abstract A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-substrate variations during sequential depositions. A suitable barrier includes a preheat ring extension that mates with an extension of the susceptor support.
Inventors
- 👤 Israel Beinglass
- 👤 Mahalingam Venkatesan
- 👤 Christian M. Gronet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:13
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4585; C23C16/455; C23C16/45519; C23C16/45587; C23C16/45591; C23C16/48; C23C16/481; C30; C30B; C30B25/00; C30B25/02; C30B25/14; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
87 words
A method of improving uniformity of silicon films deposited by chemical vapor deposition onto a rotatable substrate supported by a susceptor in a vacuum chamber comprising depositing silicon onto a substrate in said chamber; and providing a barrier during deposition of silicon which prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor.
Claim 2
Independent Claim
87 words
A method of improving uniformity of silicon films deposited by chemical vapor deposition onto a rotatable substrate supported by a susceptor in a vacuum chamber comprising depositing silicon onto a substrate in said chamber; and providing a barrier during deposition of silicon which prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor.
Claim 3
Independent Claim
110 words
A method of improving uniformity of deposited silicon films from one rotatable semiconductor substrate to another substrate comprising a) mounting a semiconductor substrate on a susceptor support in a chemical vapor deposition vacuum chamber wherein said susceptor is surrounded by a barrier that prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor during deposition of silicon, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor, b) depositing silicon on said substrate, and c) repeating steps a) and b) on a different semiconductor substrate sequentially.
Claim 4
Independent Claim
110 words
A method of improving uniformity of deposited silicon films from one rotatable semiconductor substrate to another substrate comprising a) mounting a semiconductor substrate on a susceptor support in a chemical vapor deposition vacuum chamber wherein said susceptor is surrounded by a barrier that prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor during deposition of silicon, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor, b) depositing silicon on said substrate, and c) repeating steps a) and b) on a different semiconductor substrate sequentially.
Claim 5
Dependent Claim
13 words
A method according to claim 2 wherein said substrate is a silicon wafer.
Claim 6
Dependent Claim
14 words
A method according to claim 2 wherein said reaction gases include hydrogen and silane.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |