US5348911A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Material-saving process for fabricating mixed crystals
Assignee: Aixtron SE
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Filing: 1993-04-26
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Granted: 1994-09-20
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Expires: 2013-04-26
Abstract
Abstract Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.
Inventors
- 👤 Holger Jurgensen
- 👤 Klaus Gruter
- 👤 Marc Deschler
- 👤 Pieter Balk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; B; B01; B01D; B01D7/00; B01D7/02; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45557; C30B29/00; C30B29/10; C30B29/40; C30B29/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
116 words
A process for fabricating mixed crystals comprising: transferring at least one component of a composition of the mixed crystal in a reactor from a source into a vapor phase containing hydrogen and chloride compounds, said chloride compounds comprising at least HCl, a carrier gas, and said component; transporting the vapor phase to a substrate; precipitating the vapor phase on said substrate; and varying a growth rate between 1 μm/h and 500 μm/h, wherein the step of varying the growth rate includes the steps of varying the overall pressure of the vapor phase between 80 mbar and 1 mbar, and varying the HCl partial pressure in the vapor phase between 5*10 -6 bar and 5*10 -3 bar.
Claim 2
Dependent Claim
116 words
A process for fabricating mixed crystals comprising: transferring at least one component of a composition of the mixed crystal in a reactor from a source into a vapor phase containing hydrogen and chloride compounds, said chloride compounds comprising at least HCl, a carrier gas, and said component; transporting the vapor phase to a substrate; precipitating the vapor phase on said substrate; and varying a growth rate between 1 μm/h and 500 μm/h, wherein the step of varying the growth rate includes the steps of varying the overall pressure of the vapor phase between 80 mbar and 1 mbar, and varying the HCl partial pressure in the vapor phase between 5*10 -6 bar and 5*10 -3 bar.
Claim 3
Dependent Claim
19 words
A process according to claim 1, wherein the V main group element or elements are added as hydrogen compounds.
Claim 4
Dependent Claim
30 words
A process according to claim 2, wherein the partial pressure of said V main group elements present as hydrogen compounds is varied between 10 -4 bar and 10 -2 bar.
Claim 5
Dependent Claim
19 words
A process according to claim 1, wherein said component vaporized from a source is a III main group element.
Claim 6
Dependent Claim
11 words
A process according to claim 4, wherein said element is gallium.
Claim 7
Dependent Claim
15 words
A process according to claim 1, wherein the temperature of said source is 700° C.
Claim 8
Dependent Claim
14 words
A process according to claim 1, wherein said carrier gas is N 2 .
Claim 9
Dependent Claim
19 words
A process according to claim 1, wherein the V main group element or elements are added as hydrogen compounds.
Claim 10
Dependent Claim
30 words
A process according to claim 8, wherein the partial pressure of said V main group elements present as hydrogen compounds is varied between 10 -4 bar and 10 -2 bar.
Claim 11
Dependent Claim
19 words
A process according to claim 9, wherein said component vaporized from a source is a III main group element.
Claim 12
Dependent Claim
11 words
A process according to claim 10, wherein said element is gallium.
Claim 13
Dependent Claim
15 words
A process according to claim 11, wherein the temperature of said source is 700° C.
Claim 14
Dependent Claim
14 words
A process according to claim 12, wherein said carrier gas is N 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-19 | 2006-03-21 | 2006-09-20 | $7700.00 | Window Closed / Lapsed |