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FR2501908A2 Expired / Lapsed FR ⏱️ 0.0 years remaining

Depositing monocrystalline gallium arsenide on substrate - by vapour phase epitaxy at below atmospheric pressure

Assignee: Laboratoires dElectronique Philips SAS
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Filing: 1981-03-11
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Granted: —
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Expires: 2001-03-11
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Abstract

Abstract Materials to be subjected to a glass melting process are preheated by gently moving the material and exposing it during movement to a hot gas flow derived from the melting and of a glass-making furnace and flowing at a low speed. Used for preheating glass-making ingredients. The materials, including cullet, can be preheated in a loose state, without briquetting them and without causing segregation.

Inventors

  • 👤 Jean-Louis Gentner

Bibliographic Details

Application Number —
Jurisdiction FR
Data Source google_patents
Last Synchronized 2026-11-09 02:05
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42

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References Cited (Backward Citations)

GB967185A Cited

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