US4253887A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing layers of semi-insulating gallium arsenide
Assignee: Lockheed Martin Corp
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Filing: 1979-08-27
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Granted: 1981-03-03
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Expires: 1999-08-27
Abstract
Abstract A method of depositing a layer of semi-insulating gallium arsenide on a substrate by vapor phase epitaxy. The layer is deposited by thermally decomposing a gaseous mixture of arsine, gallium chloride and a small amount of water vapor to deposit a layer of gallium arsenide doped with oxygen.
Inventors
- 👤 Stuart Jolly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
61 words
A method of depositing an epitaxial layer of semi-insulating gallium arsenide on a substrate comprising the steps of: (a) bringing the substrate into contact with a gaseous mixture containing gallium, arsenic and oxygen and (b) thermally activating said material to cause the formation of gallium arsenide and oxygen which deposits on said substrate as an epitaxial layer of oxygen-doped gallium arsenide.
Claim 2
Independent Claim
61 words
A method of depositing an epitaxial layer of semi-insulating gallium arsenide on a substrate comprising the steps of: (a) bringing the substrate into contact with a gaseous mixture containing gallium, arsenic and oxygen and (b) thermally activating said material to cause the formation of gallium arsenide and oxygen which deposits on said substrate as an epitaxial layer of oxygen-doped gallium arsenide.
Claim 3
Dependent Claim
19 words
The method in accordance with claim 1 in which the gaseous mixture includes gallium chloride, arsine and water vapor.
Claim 4
Dependent Claim
23 words
The method in accordance with claim 2 in which the water vapor is present in the amount of about 10 to 1000 ppm.
Claim 5
Dependent Claim
58 words
The method in accordance with claim 3 in which the method is carried out in a tube having an open end, the substrate is in the tube in a deposition zone adjacent the open end and the gases of the mixture are mixed together in a reaction zone adjacent the deposition zone and away from the open end.
Claim 6
Dependent Claim
24 words
The method in accordance with claim 4 in which the water vapor and arsine are admitted into the tube directly in the reaction zone.
Claim 7
Dependent Claim
30 words
The method in accordance with claim 5 in which the gallium chloride is formed in the tube in a zone adjacent the reaction zone but away from the deposition zone.
Claim 8
Dependent Claim
20 words
The method in accordance with claim 6 in which the gallium chloride is formed by passing hydrogen chloride over gallium.
Claim 9
Dependent Claim
31 words
The method in accordance with claim 7 in which each of the water vapor, arsine and gallium chloride is carried into the reaction zone by a flow of hydrogen carrier gas.
Claim 10
Dependent Claim
30 words
The method in accordance with claim 8 in which the water vapor is obtained by passing the hydrogen carrier gas over water at a temperature of below about 0° C.
Claim 11
Dependent Claim
57 words
The method in accordance with claim 7 in which the deposition zone is at a temperature of about 650° C. to 750° C., the reaction zone is at a temperature of about 800° C. to 875° C. and the zone where the gallium chloride is formed is at a temperature of about 800° C. to 1000° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-02 | 1984-09-01 | 1985-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-02 | 1988-09-01 | 1989-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-02 | 1992-09-01 | 1993-03-03 | $7700.00 | Window Closed / Lapsed |