Abstract A method of epitaxially growing, preferably, a III - V compound semiconductor onto a substrate by forming a gaseous stream of (1) a gaseous mixture formed by a reaction of hydrogen halide (or water vapor) and a group III element and (2) at least one group V element; disposing a III - V compound semiconductor or a constituting element of a III - V compound semiconductor in a region held at a high temperature upstream of the substrate; reacting the gaseous stream, particularly unreacted hydrogen halide (or unreacted water vapor) with the disposed material and passing the thus reacted gaseous stream into contact with the substrate to deposite the III - V compound semiconductor on its surface. The substrate is maintained at a lower temperature than the disposed material. This process is similarly applied to mixed crystals as well as compound semiconductor layers of other groups.
A method according to claim 1 wherein the III - V compound of the second source material includes one element which is the same as an element of the deposited epitaxial layer.
Claim 2
Dependent Claim
85 words
A method according to claim 1, wherein said second source material is previously doped with dopant impurities in an amount exceeding that desired in the III-V compound epitaxial layer and the partial pressure of the material of said volatile group V element in the gas mixture of the subhalide or suboxide of the group III element and the volatile group V element in the vicinity of said second source material is regulated to thereby control the amount of the impurities doped in said epitaxial layer.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the second source material is a group III element other than said source material.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein the second source material is a group V element-doped group III element other than said source material.
Claim 5
Dependent Claim
27 words
A method according to claim 1, wherein the second source material is the group III-V compound other than the group III-V compound deposited on said substrate material.