US3635771A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing semiconductor material
Assignee: Texas Instruments Inc
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Filing: 1968-05-21
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Granted: 1972-01-18
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Expires: 1988-05-21
Abstract
Abstract An improved method of depositing a semiconductor material from a gaseous reactant stream containing unwanted contaminants onto a substrate by contacting the gaseous reactant stream from which the semiconductor material is to be deposited with a solid form of the same semiconductor material before the gaseous reactant stream is passed over the substrate. The solid semiconductor material, for example, gallium arsenide, may take the form of a layer of gallium gallium coated on the wall of a reactor within which the deposition of gallium arsenide is to be made, the coating being formed at a point between the source of the gaseous reactant stream and the substrate so that the gaseous reactant stream will pass over the coating before encountering the substrate. Impurities in the gaseous reactant stream will be absorbed by the coating of gallium arsenide thus reducing the level of impurities in the gaseous reactant stream before it reaches the substrate.
Inventors
- 👤 Don W Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:31
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S438/00; Y10S438/909; Y10S438/935
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
29 words
the second temperature zone including the outlet region of said vessel and being at a value sufficient for vapor deposition of said III-V material upon a support substrate, and
Claim 2
Dependent Claim
23 words
the second temperature zone being within the temperature range of 500* - 730* C. and including said solid mass of gallium arsenide, and
Claim 3
Independent Claim
51 words
A method for decontaminating a reactant gas of the type used in a reactant vessel for vapor depositing a selected III-V material onto a support substrate that is capable of supporting vapor deposition thereon of said selected III-V material, comprising the following steps: a. forming three temperatures zones within said vessel,
Claim 4
Dependent Claim
29 words
the second temperature zone including the outlet region of said vessel and being at a value sufficient for vapor deposition of said III-V material upon a support substrate, and
Claim 5
Dependent Claim
73 words
the third temperature zone being approximately 750* C. and including said gallium arsenide substrate; wherein e. said carrier gas first passes over said preselected quantity of gallium arsenide to produce said reactant gas, then said reactant gas passes over said solid mass of gallium arsenide for decontaminating said reactant gas, and then said decontaminated reactant gas passes over said gallium arsenide substrate for vapor depositing said gallium arsenide onto said gallium arsenide substrate.
Claim 6
Dependent Claim
305 words
the third temperature zone being intermediate said inlet and outlet regions of said vessel and being at a value sufficient to maintain a solid mass of said III-V material in its solid state, b. selectively positioning a preselected quantity of said III-V material within said inlet region; c. injecting a carrier gas into said inlet region and passing said carrier gas over said preselected quantity of said III-V material to produce said reactant gas; wherein d. said carrier gas enters said inlet region and passes over said preselected quantity of said III-V material to produce said reactant gas which is a gaseous mixture of a gaseous Group III species and a gaseous Group V species, then said reactant gas enters said intermediAte zone to produce a solid mass of said III-V material therein, and then the remaining reactant gas enters said outlet region and is exhausted therefrom; deactivating said temperature zones within said vessel to a selected temperature; f. positioning said support substrate within said outlet region; g. repeating step (a) above so as to reactivate said temperature zones within said vessel; and h. injecting a carrier gas into said inlet region and passing said carrier gas over said preselected quantity of said IiI-V material to produce said reactant gas; wherein i. said carrier gas enters said inlet region and passes over said preselected quantity of said III-V material to produce said reactant gas which is a gaseous mixture of a gaseous Group III species and gaseous Group V species, then said reactant gas enters said intermediate zone and passes over said solid mass of said III-V material for preferentially absorbing unwanted contaminants from said reactant gas, and then said substantially decontaminated reactant gas enters said outlet region and passes over said support substrate for vapor deposition of said III-V material onto said support substrate.
Claim 7
Dependent Claim
190 words
the third temperature zone being intermediate said inlet and outlet regions of said vessel and being at a value sufficient to maintain a solid mass of said III-V material in its solid statE, b. selectively positioning a preselected quantity of said III-V material within said inlet region; c. forming a solid mass of said III-V material within said intermediate region; d. positioning said support substrate within said outlet region; and e. injecting a carrier gas into said inlet region and passing said carrier gas over said preselected quantity of said III-V material to produce said reactant gas; wherein f. said carrier gas enters said inlet region and passes over said preselected quantity of said III-V material to produce said reactant gas which is a gaseous mixture of a gaseous Group III species and a gaseous Group V species, then said reactant gas enters said intermediate zone and passes over said solid mass of said III-V material for substantially decontaminating said reactant gas, and then said substantially decontaminated reactant gas enters said outlet region and passes over said support substrate for vapor deposition of said III-V material onto said support substrate.
Claim 8
Dependent Claim
37 words
The method of claim 2 wherein said first temperature zone is about 825* C., said second temperature zone is about 750* C., and said third temperature zone is within the temperature range of 500* - 730* C.
Claim 9
Dependent Claim
29 words
The method of claim 2 wherein said III-V material is selected from the group consisting of gallium arsenide, indium arsenide, gallium phosphide, gallium indium arsenide and gallium arsenide phosphide.
Claim 10
Dependent Claim
26 words
The method of claim 2 wherein said solid mass of said III-V material is secured to the inner wall of said vessel within said intermediate region.
Claim 11
Dependent Claim
31 words
The method of claim 2 wherein said carrier gas includes a transport agent capable of transporting the Group III species of said preselected quantity of III-V material in a gaseous state.
Claim 12
Dependent Claim
22 words
The method of claim 2 and further including the step of mixing hydrogen gas and arsenic gas to produce said carrier gas.
Claim 13
Dependent Claim
23 words
The method of claim 2 wherein said reactant gas is a gaseous mixture including hydrogen gas, a halogen gas and an arsenic gas.
Claim 14
Dependent Claim
50 words
The method of claim 2 and further including the step of injecting preselected dopants in gaseous form within said outlet region of said vessel between said support substrate and said solid mass of III-V material at substantially the same time that said carrier gas is injected into said inlet region.
Claim 15
Independent Claim
55 words
A method for preferentially absorbing unwanted contaminants from a reactant gas of the type used in a reactant vessel prior to vapor depositing a III-V material onto a support substrate that is capable of supporting vapor deposition thereon of said selected III-V material, comprising the following steps: a. forming three temperature zones within said vessel,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-17 | 1975-07-19 | 1976-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-17 | 1979-07-19 | 1980-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-17 | 1983-07-19 | 1984-01-18 | $7700.00 | Window Closed / Lapsed |