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US3361600A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of doping epitaxially grown semiconductor material

Assignee: International Business Machines Corp
•
Filing: 1965-08-09
•
Granted: 1968-01-02
•
Expires: 1985-08-09
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Abstract

No abstract record available.

Inventors

  • 👤 Reisman Arnold
  • 👤 Berkenblit Melvin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 06:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/08; H10P14/24; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 81 words
A METHOD FOR DOPING EPTIAXIALLY GROWN SEMICONDUCTOR MATERIAL IN A PERTURABLE DISPROPORTIONATION SYSTEM COMPRISING THE STEPS OF REACTING GERMANIUM WITH A HYDROGEN, INERT GAS, HALIDE MIXTURE TO PRODUCE A MIXTURE OF COMPOUNDS OF SAID ELEMENTS IN THE VAPOR PHASE AND SIMULTANEOUSLY ADDING A GASEOUS HYDRIDE DOPANT AND A PERTURBING GAS TO SAID MIXTURE TO PYROLYTICALLY DECOMPOSE SAID GASEOUS HYDRIDE AND TO PERTURB THE EQUILIBRIUM VAPOR PHASE CONTENT OF GERMANIUM IN SAID MIXTURE WHEREBY DOPED GERMANIUM IS EPITAXIALLY DEPOSITED ON A SUBSTRATE.
Claim 2
Independent Claim 81 words
A METHOD FOR DOPING EPTIAXIALLY GROWN SEMICONDUCTOR MATERIAL IN A PERTURABLE DISPROPORTIONATION SYSTEM COMPRISING THE STEPS OF REACTING GERMANIUM WITH A HYDROGEN, INERT GAS, HALIDE MIXTURE TO PRODUCE A MIXTURE OF COMPOUNDS OF SAID ELEMENTS IN THE VAPOR PHASE AND SIMULTANEOUSLY ADDING A GASEOUS HYDRIDE DOPANT AND A PERTURBING GAS TO SAID MIXTURE TO PYROLYTICALLY DECOMPOSE SAID GASEOUS HYDRIDE AND TO PERTURB THE EQUILIBRIUM VAPOR PHASE CONTENT OF GERMANIUM IN SAID MIXTURE WHEREBY DOPED GERMANIUM IS EPITAXIALLY DEPOSITED ON A SUBSTRATE.

References Cited (Backward Citations)

US3089788A Cited
US3096209A Cited
US3192083A Cited
US3152932A Cited
US3224912A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-01-01 1971-07-03 1972-01-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-01-01 1975-07-03 1976-01-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-01-01 1979-07-03 1980-01-02 $7700.00 Window Closed / Lapsed

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