Method for controlling donor and acceptor impurities on gaseous vapor through the use of hydrogen halide gas

Claim 1

IN THE METHOD OF PRODUCING AN ELECTRONIC SEMICONDUCTOR CRYSTAL BY PYROLYTICALLY PRECIPITATING AND DOPING THE SEMICONDUCTOR SUBSTANCE ONTO A HEATED CARRIER BODY FROM A REACTION GAS CONTINUING HYDROGEN, AND A GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE, THE STEPS OF ADDING GASEOUS COMPOUNDS OF DOPING AGENTS TO THE REACTION GAS, ONE OF SAID DOPING AGENTS HAVING ACCEPTOR ACTION AND THE OTHER OF SAID DOPING AGENTS HAVING DONOR ACTION, MAINTAINING THE QUANTITY OF DOPING AGENTS IN THE REACTION GAS SUBSTANTIALLY CONSTANT, ADDING A HYDROGENHALIDE TO SAID REACTION GAS CONTAINING DOPING AGENTS FOR CONTROLLING THE AMOUNT OF DEPOSITION OF THE DOPING MATERIALS, THE RATIO OF THE QUANTITY OF DOPING AGENTS WITH DONOR ACTION TO SEMICONDUCTOR SUBSTANCE PRECIPITATING IN THE SAME INTERVAL OF TIME BEING CONSIDERABLY LESS DEPENTENT THAN THE RATIO OF THE QUANTITY OF DOPING AGENT WITH ACCEPTOR ACTION UPON THE PROPORTION OF THE HYDROGENHALIDE TO THE REACTION GAS, AND CHANGING THE CONDUCTANCE OF THE GROWING SEMICONDUCTOR CRYSTAL BY VARYING THE PROPORTION OF THE REACTION GAS.