US3314832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for heat treating of monocrystalline semiconductor bodies
Assignee: Siemens Schuckertwerke AG
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Filing: 1964-03-17
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Granted: 1967-04-18
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Expires: 1984-03-17
Abstract
No abstract record available.
Inventors
- 👤 Raithel Kurt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:34
CPC Classifications
C; C22; C22F; C22F1/00; C22F1/16; C23; C23C; C23C10/00; C23C10/06; C23C10/08; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B31/00; C30B31/06; C30B31/10; C30B31/16; C30B31/165; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
101 words
THE METHOD OF PRODUCING A P-DOPED REGION IN A SEMICONDUCTOR BODY OF SILICON, WHICH COMPRISES SEALING THE SILICON BODY AND A QUANTITY OF GALLIUM INTO A VESSEL OF QUARTZ AT MUTUALLY SPACED LOCATIONS, HEATING THE SILICON BODY TO ABOVE 1200*C. TO FORM SILICON MONOXIDE AND SIMULTANEOUSLY KEEP THE GALLIUM LOCALITY AT A TEMPERATURE OF ABOUT 1000 TO 1100*C. FOR CAUSING HE VEOLVING MONOXIDE TO PRECIPITATE NEAR SAID GALLIUM QUANTITY, SAID THEREAFTER DIFFUSING GALLIUM FROM SAID QUANTITY INTO SAID SILICON BODY BY LOWERING THE TEMPERATURE OF SAID QUANTITY TO APPROXIMATELY 950*C. FOR EFFECTING DIFFUSION DOPING WHILE MAINTAINING THE SILICON BODY ABOVE 1200*C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-04-17 | 1970-10-17 | 1971-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-04-17 | 1974-10-17 | 1975-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-04-17 | 1978-10-17 | 1979-04-18 | $7700.00 | Window Closed / Lapsed |