US3200019A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a semiconductor device
Assignee: RCA Corp
•
Filing: 1962-01-19
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Granted: 1965-08-10
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Expires: 1982-01-19
Abstract
No abstract record available.
Inventors
- 👤 Jr Joseph H Scott
- 👤 Olmstead John
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:06
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10D; H10D99/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/118; Y10S148/145; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
117 words
THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PREPARING A SEMICONDUCTOR BODY; VAPORIZING A MIXTURE CONSISTING OF AN ORGANIC SILOXANE COMPOUND AND A VOLATILE SUBSTANCE CAPABLE OF MODIFYING THE CONDUCTIVITY TYPE OF SAID SEMICONDUCTOR BODY; HEATING SAID SEMICONDUCTOR BODY IS THE MIXED VAPORS OF SAID SILOXANE COMPOUND AND SAID CONDUCTIVITY MODIFIER TO A TEMPERATURE BELOW THE MELTING POINT OF SAID SEMICONDUCTIVE BODY BUT ABOVE THE TEMPERATURE AT WHICH SAID SILOXANE COMPOUND DECOMPOSES TO DEPOSIT ON THE SURFACE OF SAID BODY A COATING CONSISTING OF SILICON OXIDE CONTAINING SAID CONDUCTIVITY MODIFIER; AND, HEATING SAID COATED SEMICONDUCTIVE BODY TO DIFFUSE SAID MODIFIER FROM SAID COATING INTO THAT PORTION ONLY OF SAID BODY IMMEDIATELY BENEATH SAID COATING.
Claim 2
Independent Claim
117 words
THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PREPARING A SEMICONDUCTOR BODY; VAPORIZING A MIXTURE CONSISTING OF AN ORGANIC SILOXANE COMPOUND AND A VOLATILE SUBSTANCE CAPABLE OF MODIFYING THE CONDUCTIVITY TYPE OF SAID SEMICONDUCTOR BODY; HEATING SAID SEMICONDUCTOR BODY IS THE MIXED VAPORS OF SAID SILOXANE COMPOUND AND SAID CONDUCTIVITY MODIFIER TO A TEMPERATURE BELOW THE MELTING POINT OF SAID SEMICONDUCTIVE BODY BUT ABOVE THE TEMPERATURE AT WHICH SAID SILOXANE COMPOUND DECOMPOSES TO DEPOSIT ON THE SURFACE OF SAID BODY A COATING CONSISTING OF SILICON OXIDE CONTAINING SAID CONDUCTIVITY MODIFIER; AND, HEATING SAID COATED SEMICONDUCTIVE BODY TO DIFFUSE SAID MODIFIER FROM SAID COATING INTO THAT PORTION ONLY OF SAID BODY IMMEDIATELY BENEATH SAID COATING.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-09 | 1969-02-08 | 1969-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-09 | 1973-02-08 | 1973-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-09 | 1977-02-08 | 1977-08-10 | $7700.00 | Window Closed / Lapsed |