US3114663A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of providing semiconductor wafers with protective and masking coatings
Assignee: RCA Corp
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Filing: 1960-03-29
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Granted: 1963-12-17
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Expires: 1980-03-29
Abstract
No abstract record available.
Inventors
- 👤 Klerer Julius
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 06:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/118
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
76 words
THE METHOD OF FABRICATING A TRANSISTOR COMPRISING THE STEPS OF MASKING PORTIONS OF TWO OPPOSING MAJOR FACES OF A GIVEN CONDUCTIVITY TYPE SEMICONDUCTIVE WAFER, THERMALLY DECOMPOSING AN ORGANIC SILOXANE COMPOUND AT AT TEMPERATURE ABOVE 600*C., MIXING THE DECOMPOSITION PRODUCTS WITH AN INERT CARRIER GAS SELECTED FROM THE GROUP CONSISTING OF NITROGEN, HELIUM, NEON, AND ARGON TO FORCE THE THERMAL DECOMPOSITION PRODUCTS OF SAID COMPOUND THROUGH A JET SO AS TO IMPINGE UPON AND COAT THE UNMASKED
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-12-16 | 1967-06-17 | 1967-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-12-16 | 1971-06-17 | 1971-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-12-16 | 1975-06-17 | 1975-12-17 | $7700.00 | Window Closed / Lapsed |