US4407694A
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Multi-range doping of epitaxial III-V layers from a single source
Assignee: Raytheon Co
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Filing: 1981-06-22
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Granted: 1983-10-04
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Expires: 2001-06-22
Abstract
Abstract Silicon doping of GaAs epitaxial layers grown using the AsCl 3 /H 2 /GaAs:Ga CVD system is accomplished using AsCl 3 :SiCl 4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H 2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5×10 15 to 5×10 19 cm -3 by adjusting the mole fraction of SiCl 4 in the doping solution and the H 2 flow rate to change the mole fraction of P HCl . The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1×10 16 cm -3 and 8×10 18 cm -3 . This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.
Inventors
- 👤 Victor K. Eu
- 👤 Milton Feng
- 👤 Timothy T. Zielinski
- 👤 James M. Whelan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S118/00; Y10S118/90; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
74 words
A process for providing a range of doping levels from a single doping source using vapor phase epitaxial growth of a III-V semiconductor layer under substantially equilibrium conditions using halide or hydride epitaxy growth process in which the doping source comprises a liquid solution of (a) a compound selected from the group consisting of arsenic halides and phosphorus halides and (b) a compound selected from the group consisting of silicon halides and germanium halides.
Claim 2
Dependent Claim
74 words
A process for providing a range of doping levels from a single doping source using vapor phase epitaxial growth of a III-V semiconductor layer under substantially equilibrium conditions using halide or hydride epitaxy growth process in which the doping source comprises a liquid solution of (a) a compound selected from the group consisting of arsenic halides and phosphorus halides and (b) a compound selected from the group consisting of silicon halides and germanium halides.
Claim 3
Dependent Claim
26 words
The process of claim 1 in which the III-V semiconductor layer is one selected from the group consisting of GaAs, GaP, InAs, InP and their alloys.
Claim 4
Dependent Claim
13 words
The process of claim 2 in which the III-V semiconductor layer comprises GaAs.
Claim 5
Dependent Claim
45 words
The process of claim 3 in which the halide epitaxy process comprises AsX 3 /H 2 /GaAs:Ga, where X is an element selected from the group consisting of chlorine and bromine and the doping source comprises AsX 3 :Si-X, where Si-X is a silicon halide.
Claim 6
Dependent Claim
10 words
The process of claim 4 in which X is chlorine.
Claim 7
Dependent Claim
16 words
The process of claim 5 in which the doping source comprises AsCl 3 :SiCl 4 .
Claim 8
Dependent Claim
27 words
The process of claim 6 in which the mole fraction of SiCl 4 in AsCl 3 :SiCl 4 ranges from about 10 -1 to 10 -4 .
Claim 9
Dependent Claim
18 words
The process of claim 5 in which the doping source comprises AsCl 3 :Si 2 Cl 6 .
Claim 10
Dependent Claim
16 words
The process of claim 5 in which the doping source comprises AsCl 3 :SiHCl 3 .
Claim 11
Dependent Claim
56 words
A process for doping a III-V semiconductor layer grown by vapor phase epitaxial process under substantially equilibrium conditions from a doping source, characterized in that the doping source consists essentially of a liquid solution of AsCl 3 and a silicon chloride compound selected from the group consisting of SiCl 4 and Si 2 Cl 6 .
Claim 12
Dependent Claim
56 words
A process for doping a III-V semiconductor layer grown by vapor phase epitaxial process under substantially equilibrium conditions from a doping source, characterized in that the doping source consists essentially of a liquid solution of AsCl 3 and a silicon chloride compound selected from the group consisting of SiCl 4 and Si 2 Cl 6 .
Claim 13
Dependent Claim
13 words
The process of claim 10 in which the III-V semi-conductor layer comprises GaAs.
Claim 14
Dependent Claim
17 words
The process of claim 10 in which the silicon chloride compound consists essentially of SiCl 4 .
Claim 15
Dependent Claim
22 words
The process of claim 12 in which the mole fraction of SiCl 4 ranges from about 10 -1 to 10 -4 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-03 | 1987-04-04 | 1987-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-03 | 1991-04-04 | 1991-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-03 | 1995-04-04 | 1995-10-04 | $7700.00 | Window Closed / Lapsed |