US3594242A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for production of epitaxial films
Assignee: Monsanto Co
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Filing: 1968-09-26
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Granted: 1971-07-20
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Expires: 1988-09-26
Abstract
Abstract THE METHOD OF PRODUCING SEMICONDUCTOR MATERIALS BY THE EPITAXIAL DEPOSITION OF A FILM ON A SUBSTRATE BY INTRODUCING AN EPITAXIAL REACTION GAS MIXTURE INTO A FIRST ZONE AND THEREAFTER PASSING THE GAS MIXTURE INTO AN ISOTHERMAL ZONE AT AN INITIALLY HIGH VELOCITY BETWEEN 5X102 CENTIMETERS PER SECOND AND THE SONIC VELOCITY OF THE GAS. AS A RESULT THEREOF, RAPID MIXING AND AGITATION OF THE GAS IN THE ISOTHERMAL ZONE PERMIT NON-UNIFORM DEPOSITION OF THE FILM ON A SUBSTRATE IN THE ISOTHERMAL ZONE.
Inventors
- 👤 John W Burd
- 👤 Warren O Groves
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:41
CPC Classifications
C; C30; C30B; C30B35/00; C23; C23C; C23C16/00; C30B25/00; C30B25/02; C30B25/08; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-19 | 1975-01-18 | 1975-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-19 | 1979-01-18 | 1979-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-19 | 1983-01-18 | 1983-07-20 | $7700.00 | Window Closed / Lapsed |