US5246536A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing single crystal thin films of element semiconductor
Assignee: Seiko Instruments Inc
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Filing: 1989-03-10
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Granted: 1993-09-21
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Expires: 2009-03-10
Abstract
Abstract A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.
Inventors
- 👤 Junichi Nishizawa
- 👤 Kenji Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/14; C30B29/60; C30B29/68; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/3602
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
138 words
A method of growing a single-crystal, thin layer of silicon on a silicon substrate, from the vapor phase, at a reduced pressure, comprising the steps of: placing a silicon substrate within a crystal growth chamber; evacuating the interior of said crystal growth chamber to a reduced pressure; heating said silicon substrate to 1050° C.; and then continuously supplying only a single stream of pure SiH 2 Cl 2 gas at a pressure lying within the range of gas feeding pressure (Pa) encompassed by the curve drawn through the plotting points in FIG. 5 of the attached drawings, onto said silicon substrate to grown a single-crystal, thin film of silicon on said silicon substrate, said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal-growing process.
Claim 2
Independent Claim
138 words
A method of growing a single-crystal, thin layer of silicon on a silicon substrate, from the vapor phase, at a reduced pressure, comprising the steps of: placing a silicon substrate within a crystal growth chamber; evacuating the interior of said crystal growth chamber to a reduced pressure; heating said silicon substrate to 1050° C.; and then continuously supplying only a single stream of pure SiH 2 Cl 2 gas at a pressure lying within the range of gas feeding pressure (Pa) encompassed by the curve drawn through the plotting points in FIG. 5 of the attached drawings, onto said silicon substrate to grown a single-crystal, thin film of silicon on said silicon substrate, said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal-growing process.
Claim 3
Independent Claim
179 words
A method of growing a single-crystal, thin layer of silicon on a flat silicon substrate, from the vapor phase, under a reduced pressure, comprising the steps of: placing the flat silicon substrate in a stationary, horizontal position within a crystal growth chamber in a crystal growing apparatus; evacuating said crystal growth chamber and maintaining the pressure within said chamber at not higher than about 10 -6 Pa; heating said substrate to a temperature effective for cleaning said substrate and then heating said substrate to 1050° C.; and then continuously directing a single stream consisting of SiH 2 Cl 2 vapor at a pressure lying within the range of gas feeding pressure (Pa) encompassed by the curve drawn through the plotting points in FIG. 5 of the attached drawings, against the flat upper surface of said substrate for a period of time effective to grow a single-crystal, thin film of silicon on said substrate, said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal growing process.
Claim 4
Independent Claim
179 words
A method of growing a single-crystal, thin layer of silicon on a flat silicon substrate, from the vapor phase, under a reduced pressure, comprising the steps of: placing the flat silicon substrate in a stationary, horizontal position within a crystal growth chamber in a crystal growing apparatus; evacuating said crystal growth chamber and maintaining the pressure within said chamber at not higher than about 10 -6 Pa; heating said substrate to a temperature effective for cleaning said substrate and then heating said substrate to 1050° C.; and then continuously directing a single stream consisting of SiH 2 Cl 2 vapor at a pressure lying within the range of gas feeding pressure (Pa) encompassed by the curve drawn through the plotting points in FIG. 5 of the attached drawings, against the flat upper surface of said substrate for a period of time effective to grow a single-crystal, thin film of silicon on said substrate, said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal growing process.
Claim 5
Independent Claim
126 words
A method of growing a single-crystal, thin layer of silicon on a silicon substrate, form the vapor phase, at a reduced pressure, comprising the steps of: placing a silicon substrate within a crystal growth chamber; evacuating the interior of said crystal growth chamber to a reduced pressure; heating said silicon substrate to 1050° C. and then continuously supplying onto said silicon substrate only a single stream of pure SiH 2 Cl 2 gas at a pressure effective to grow a single-crystal, thin film of silicon on said silicon substrate at a growth rate of from about 0.1 to about 0.4 μm/min., said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal-growing process.
Claim 6
Independent Claim
126 words
A method of growing a single-crystal, thin layer of silicon on a silicon substrate, form the vapor phase, at a reduced pressure, comprising the steps of: placing a silicon substrate within a crystal growth chamber; evacuating the interior of said crystal growth chamber to a reduced pressure; heating said silicon substrate to 1050° C. and then continuously supplying onto said silicon substrate only a single stream of pure SiH 2 Cl 2 gas at a pressure effective to grow a single-crystal, thin film of silicon on said silicon substrate at a growth rate of from about 0.1 to about 0.4 μm/min., said single stream of SiH 2 Cl 2 vapor being the only material that is fed into said crystal growth chamber during the crystal-growing process.
References Cited (Backward Citations)
US4179312A
Cited
JPS56124228A
Cited
US4309240A
Cited
US4309241A
Cited
US4444812A
Cited
US4392453A
Cited
US4430149A
Cited
US4590024A
Cited
GB2162206A
Cited
US4745088A
Cited
US4780174A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |