Method for low-tension epitaxial growth

Abstract

Abstract PURPOSE:To mass produce the epitaxial film having an impurity density distribution of a steep gradient on the wafer which has been heated up to the prescribed temperature by a method wherein an SiH2Cl2 is flown as carrier in the reaction tube which has been decompressed to the prescribed pressure. CONSTITUTION:A wafer 1 is held in an upright position on a quartz boat 2 and a quartz reaction tube 3 is evacuated. The wafer 1 is heated up to about 900-1,100 deg.C by a resistance furnace 5, the SiH2Cl2 is used as raw gas and is induced as carrier, and the epitaxial film is grown on the wafer when the above is maintained at approximately 0.1-0.01Torr. In this constitution, a susceptor is unnecessary and the quartz boat 2 can be arranged in an upright position, thereby enabling to improve the mass productivity. In addition,there exists a very small variation of temperature in the wafer. Therefore, transition and the like are hard to be generated, no slip is produced and an excellent epitaxial film can be obtained.

Inventors

• 👤 Harushige Kurokawa
• 👤 Yoshihide Endo
• 👤 Eiji Shida

Bibliographic Details