Combination gas curtains for continuous chemical vapor deposition production of silicon bodies

Claim 2

A continuous process for preparing crystalline bodies of silicon from gaseous compounds containing silicon comprising continuously: a. forming a continuous virgin crystalline slim rod from a molten silicon source in a pulling chamber; b. heating said slim rod in said pulling chamber to the decomposition temperature of a gaseous compound containing silicon; c. feeding said heated slim rod directly from said pulling chamber into and through a chemical vapor deposition chamber in open communication with said pulling chamber; d. introducing a first gas into said chemical vapor deposition chamber near the entry point of said heated slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in the direction of movement of said slim rod, e. introducing a second gas into said chemical vapor deposition chamber near the exit point of said slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in a direction counter to the movement of said slim rod, f. contacting said slim rod in said chemical vapor deposition chamber with said gaseous compound while maintaining a temperature sufficient to decompose said gaseous compound and deposit silicon in crystalline form onto the surface of said slim rod to enlarge said slim rod; and g. withdrawing the resulting enlarge silicon body from said chemical vapor deposition chamber.

Claim 3

The continuous process according to claim 1 wherein said slim rod upon entry into and passage through said chemical vapor deposition chamber is exposed to a concentric, uniform geometrically focused heat source.

Claim 4

The continuous process according to claim 2 wherein said heat source is a radiant heat furnace surrounding said chemical vapor deposition chamber and focused onto said slim rod through transparent walls of said chemical vapor deposition chamber.

Claim 5

The continuous process of claim 1 wherein said temperature is from about 1000° C. to about 1300° C.

Claim 6

The continuous process according to claim 1 wherein said gaseous compound is a compound having the formula Si k H m X n where k is 1 to 2, m is 0-6, n is 0-6, and X is a halogen.

Claim 7

The continuous process according to claim 1 wherein said first gas is selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon.

Claim 8

The continuous process according to claim 1 wherein said second gas is comprised of hydrogen chloride.

Claim 9

The continuous process according to claim 7 wherein said hydrogen chloride is introduced at a rate to provide from about 0.1% to about 5% by volume of said hydrogen chloride to said gaseous compound in said chemical vapor deposition chamber.

Claim 10

The continuous process according to claim 1 wherein said slim rod is continuously pulled from said pulling chamber into, through and from said chemical vapor deposition chamber by pulling means outside of said chemical vapor deposition chamber.

Claim 11

The continuous process according to claim 1 wherein a positive pressure is maintained between said pulling chamber and said chemical vapor deposition chamber, the positive pressure creating a gas flow from said pulling chamber into said chemical vapor deposition chamber.

Claim 12

The continuous process according to claim 1 wherein said silicon source is continuously supplied to said pulling chamber.

Claim 13

The continuous process according to claim 1 wherein the passage of said slim rod into, through and from said chemical vapor deposition chamber is countercurrent to the flow of said gaseous compound.

Claim 14

The continuous process according to claim 1 wherein said resulting enlarged silicon body is cooled as it is withdrawn from said chemical vapor deposition chamber.

Claim 15

The continuous process according to claim 1 wherein said enlarged silicon body passes from said chemical vapor deposition chamber directly into a longitudinally expandable controlled atmosphere chamber which is in open communication with said chemical vapor deposition chamber.

Claim 16

The continuous process according to claim 1 wherein said silicon deposits upon said slim rod forming a single crystal body having hexagonal surfaces.

Claim 17

The continuous process according to claim 1 wherein said deposited silicon has the orientation and crystal lattice structure of said slim rod.

Claim 18

The continuous process according to claim 1 wherein said slim rod is continually formed according to the float-zone process.

Claim 19

The continuous process according to claim 1 wherein said slim rod is continuously formed according to the Czochralski process.

Claim 20

The continuous process according to claim 1 wherein said gaseous compounds are comprised of trichlorosilane.

Claim 21

The continuous process according to claim 1 wherein more than one said bodies are prepared simultaneously.

Claim 22

A continuous process for preparing single crystal bodies of silicon from gaseous compounds containing silicon comprising continuously: a. forming a continuous virgin single crystal slim rod from a continuously supplied molten silicon source in a pulling chamber; b. heating said slim rod in said pulling chamber to a temperature of from about 1000° C. to about 1300° C.; c. feeding said heated slim rod from said pulling chamber into a chemical vapor deposition chamber through an open communication zone between said pulling chamber and said chemical vapor deposition chamber; d. introducing a first gas into said chemical vapor deposition chamber near the entry point of said heated slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in the direction of movement of said slim rod, e. introducing a second gas into said chemical vapor deposition chamber near the exit point of said slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in a direction counter to the movement of said slim rod, f. contacting said slim rod in said chemical vapor deposition chamber countercurrently with a gaseous compound having the formula Si k H m X n where K is 1 to 2, m is 0-6, n is 0-6 and X is a halogen while maintaining the temperature of said slim rod at from about 1000° to about 1300° C. by focused radiant heat means to decompose said gaseous compound and deposit silicon in single crystal form onto the surface of said slim rod to enlarge said slim rod; and g. withdrawing and cooling the resulting enlarged single crystal silicon body from said chemical vapor deposition chamber.

Claim 23

A continuous process for preparing single crystal bodies of silicon from gaseous compounds containing silicon comprising continuously: a. forming a continuous virgin single crystal slim rod from a continuously supplied molten silicon source in a pulling chamber; b. heating said slim rod in said pulling chamber to a temperature of from about 1000° C. to about 1300° C.; c. feeding said heated slim rod from said pulling chamber into a chemical vapor deposition chamber through an open communication zone between said pulling chamber and said chemical vapor deposition chamber; d. introducing a first gas into said chemical vapor deposition chamber near the entry point of said heated slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in the direction of movement of said slim rod, e. introducing a second gas into said chemical vapor deposition chamber near the exit point of said slim rod in a manner to provide a gas curtain flowing along and isolating the inner surface of said chemical vapor deposition chamber in a direction counter to the movement of said slim rod, f. contacting said slim rod in said chemical vapor deposition chamber countercurrently with a gaseous compound having the formula Si k H m X n where K is 1 to 2, m is 0-6, n is 0-6 and X is a halogen while maintaining the temperature of said slim rod at from about 1000° to about 1300° C. by focused radiant heat means to decompose said gaseous compound and deposit silicon in single crystal form onto the surface of said slim rod to enlarge said slim rod; and g. withdrawing and cooling the resulting enlarged single crystal silicon body from said chemical vapor deposition chamber.