US3963838A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of operating a quartz fluidized bed reactor for the production of silicon
Assignee: Texas Instruments Inc
•
Filing: 1974-05-24
•
Granted: 1976-06-15
•
Expires: 1994-05-24
Abstract
Abstract In order to prevent breakage of a quartz fluidized bed reactor utilized in the production of silicon, the reactor is cooled as soon as a thin layer of silicon is formed on the reactor walls and then reheated to continue silicon growth. In this manner, the thin layer of silicon shatters and forms a weak foundation for subsequent silicon deposition on the reactor wall when the silicon deposition is continued. Subsequently deposited silicon on the walls continuously peels off without breaking the reactor.
Inventors
- 👤 H. S. N. Setty
- 👤 Carl L. Yaws
- 👤 Bobby Ray Martin
- 👤 Daniel Joseph Wangler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:47
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
212 words
A method of operating a quartz wall fluidized bed deposition reactor for depositing silicon on a bed of silicon seed particles comprising the steps of: forming a bed of silicon seed particles in said reactor; charging said reactor with an inert gas stream; heating said reactor to a deposition temperature between 950°-1250° C; gradually removing said inert gas stream and charging said reactor with a gaseous reactant stream comprised of silicon chloride and/or a chlorosilane, said reactant stream maintaining said particles in fluidized suspension; maintaining said deposition temperature for a predetermined length of time, whereby deposition of said silicon material on said quartz wall does not exceed a thickness of 2 mils; gradually removing said reactant stream and charging said reactor with said inert gas; cooling said reactor to a temperature between 30-600° C whereby silicon material deposited on said quartz reactor wall shatters and peels from said wall; reheating said reactor to said deposition temperature; again gradually removing said inert gas stream and charging said reactor with said gaseous reactant stream; and charging said reactor with said gaseous reactant stream; maintaining said deposition temperature; and continuously adding new silicon particles to said bed while removing from said reactor larger silicon particles upon which sufficient silicon material is deposited without reactor breakage.
Claim 2
Independent Claim
212 words
A method of operating a quartz wall fluidized bed deposition reactor for depositing silicon on a bed of silicon seed particles comprising the steps of: forming a bed of silicon seed particles in said reactor; charging said reactor with an inert gas stream; heating said reactor to a deposition temperature between 950°-1250° C; gradually removing said inert gas stream and charging said reactor with a gaseous reactant stream comprised of silicon chloride and/or a chlorosilane, said reactant stream maintaining said particles in fluidized suspension; maintaining said deposition temperature for a predetermined length of time, whereby deposition of said silicon material on said quartz wall does not exceed a thickness of 2 mils; gradually removing said reactant stream and charging said reactor with said inert gas; cooling said reactor to a temperature between 30-600° C whereby silicon material deposited on said quartz reactor wall shatters and peels from said wall; reheating said reactor to said deposition temperature; again gradually removing said inert gas stream and charging said reactor with said gaseous reactant stream; and charging said reactor with said gaseous reactant stream; maintaining said deposition temperature; and continuously adding new silicon particles to said bed while removing from said reactor larger silicon particles upon which sufficient silicon material is deposited without reactor breakage.
Claim 3
Dependent Claim
12 words
The method according to claim 1 wherein said inert gas is argon.
Claim 4
Dependent Claim
14 words
The method according to claim 1 wherein said predetermined time is between 30-90 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |