US3016291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pure silicon by hydrogen reduction
Assignee: Individual
•
Filing: 1959-04-15
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Granted: 1962-01-09
•
Expires: 1979-04-15
Abstract
No abstract record available.
Inventors
- 👤 Robert S Aries
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:09
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
METHOD FOR THE PRODUCTION OF SILICON OF VERY HIGH PURITY WHICH COMPRISES HEATING A SILICON HALIDE IN THE VAPOR STATE WITH HYDROGEN, AT A TEMPERATURE BETWEEN ABOUT 900* AND ABOUT 1200*C., THE HYDROGEN BEIN PRESENT IN AN AMOUNT BETWEEN 4 AND ABOUT 8 MOLS PER MOL OF SILICON HALIDE, AND THE TIME OF CONTACT OF THE REACTANTS BEING ABOUT 15 TO 25 SECONDS, AND RECOVERING THE LIBERATED SILICON.
Claim 2
Dependent Claim
68 words
METHOD FOR THE PRODUCTION OF SILICON OF VERY HIGH PURITY WHICH COMPRISES HEATING A SILICON HALIDE IN THE VAPOR STATE WITH HYDROGEN, AT A TEMPERATURE BETWEEN ABOUT 900* AND ABOUT 1200*C., THE HYDROGEN BEIN PRESENT IN AN AMOUNT BETWEEN 4 AND ABOUT 8 MOLS PER MOL OF SILICON HALIDE, AND THE TIME OF CONTACT OF THE REACTANTS BEING ABOUT 15 TO 25 SECONDS, AND RECOVERING THE LIBERATED SILICON.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-01-08 | 1965-07-10 | 1966-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-01-08 | 1969-07-10 | 1970-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-01-08 | 1973-07-10 | 1974-01-09 | $7700.00 | Window Closed / Lapsed |