Method of crystal growth by vapor deposition

Claim 2

The method of claim 1 which is further characterized by the impartation of simultaneous rotary force to both ends of said filament thereby minimizing the creation of stresses in the filament.

Claim 3

The method of claim 1 wherein the gas flowing transversely over said filament is introduced through a first foraminous panel and after passing by said filament passes through a second foraminous panel.

Claim 4

An improved method for growing rods of semiconductor material by depositing said material onto an elongated hot filament from a decomposable gas circulated over the filament, which comprises the steps of: introducing the gas into a first manifold to distribute the gas within the manifold and thereby maintain a substantially uniform pressure within the manifold, passing the gases from said first manifold through a first foraminous panel positioned parallel to the longitudinal axis of the filament to thereby direct the gas transversely of the longitudinal axis of the filament, and rotating the filament so that all points along the surface thereof will be uniformly exposed to the gas being introduced Through the first foraminous panel, passing said gas after contact with said filament through a second foraminous panel also generally parallel to the longitudinal axis of said filament, and directing the gas passing through the second foraminous panel into a second manifold for maintaining a fairly uniform pressure across the second foraminous panel.

Claim 5

The method of claim 5 in which a simultaneous rotary force is imparted to both ends of said filament to minimize creation of stresses in said filament.