US3341376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing crystalline semiconductor material on a dendritic substrate
Assignee: Siemens Schuckertwerke AG
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Filing: 1965-12-13
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Granted: 1967-09-12
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Expires: 1985-12-13
Abstract
No abstract record available.
Inventors
- 👤 Spenke Eberhard
- 👤 Welker Heinrich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:03
CPC Classifications
H; H10; H10P; H10P95/00; C; C01; C01B; C01B33/00; C01B33/02; C23; C23C; C23C16/00; C30; C30B; C30B29/00; C30B29/60; C30B29/64; C30B33/00; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S148/00; Y10S148/006; Y10S148/051; Y10S148/065; Y10S148/067; Y10S148/072; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
133 words
A METHOD FOR PRODUCING A FLAT SEMICONDUCTOR BODY OF SINGLE CRYSTAL STRUCTURE AND OF A UNIFORM THICKNESS INCLUDING SEVERAL ZONES OF DIFFERENT SEMICONDUCTING PROPERTIES BY PYROLYTICALLY PRECIPITATING A LAYER OF A SEMICONDUCTOR MATERIAL FROM A GASEOUS MIXTURE CONTAINING A COMPOUND OF SAID SEMICONDUCTOR MATERIAL AND A REACTION GAS UPON A CARRIER CRYSTAL CONSISTING OF A SEMICONDUCTOR MATERIAL HAVING THE SAME LATTICE STRUCTURE BUT ANOTHER VALUE OR TYPE OF CONDUCTIVITY AS SAID PYROLYTICALLY PRECIPITATED LAYER, EMPLOYING AS THE CARRIER CRYSTAL A SEMICONDUCTOR BODY YIELDED BY DENDRITIC GROWTH FROM A MELT OF THE LAST-MENTIONED SEMICONDUCTOR MATERIAL BY PULLING A TAPE-SHAPED CRYSTAL OUT OF A SUPERCOOLED REGION OF THE MELT, AND REMOVING SOME SEMICONDUCTOR MATERIAL FROM THE DENDRITE PRIOR TO THE PRECIPITATION STEP SO AS TO SECURE AN UNDISTURBED SURFACE UPON WHICH MONOCRYSTALLINE GROWTH CAN ENSUE.
Claim 2
Independent Claim
133 words
A METHOD FOR PRODUCING A FLAT SEMICONDUCTOR BODY OF SINGLE CRYSTAL STRUCTURE AND OF A UNIFORM THICKNESS INCLUDING SEVERAL ZONES OF DIFFERENT SEMICONDUCTING PROPERTIES BY PYROLYTICALLY PRECIPITATING A LAYER OF A SEMICONDUCTOR MATERIAL FROM A GASEOUS MIXTURE CONTAINING A COMPOUND OF SAID SEMICONDUCTOR MATERIAL AND A REACTION GAS UPON A CARRIER CRYSTAL CONSISTING OF A SEMICONDUCTOR MATERIAL HAVING THE SAME LATTICE STRUCTURE BUT ANOTHER VALUE OR TYPE OF CONDUCTIVITY AS SAID PYROLYTICALLY PRECIPITATED LAYER, EMPLOYING AS THE CARRIER CRYSTAL A SEMICONDUCTOR BODY YIELDED BY DENDRITIC GROWTH FROM A MELT OF THE LAST-MENTIONED SEMICONDUCTOR MATERIAL BY PULLING A TAPE-SHAPED CRYSTAL OUT OF A SUPERCOOLED REGION OF THE MELT, AND REMOVING SOME SEMICONDUCTOR MATERIAL FROM THE DENDRITE PRIOR TO THE PRECIPITATION STEP SO AS TO SECURE AN UNDISTURBED SURFACE UPON WHICH MONOCRYSTALLINE GROWTH CAN ENSUE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |