US6445059B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-07-28
•
Granted: 2002-09-03
•
Expires: 2019-07-28
Abstract
Abstract A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:43
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6723; H10D30/6725; H10D86/00; H10D86/40; H10D86/451; H10D86/60; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/071; H10W20/074; H10W20/075; H10W20/077; G02F1/136227
Claims Analysis
Total Claims: 70
Claim 1
Independent Claim
130 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element; a second insulating film comprising silicon oxynitride formed on said first insulating film; and an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 2
Dependent Claim
130 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element; a second insulating film comprising silicon oxynitride formed on said first insulating film; and an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 3
Dependent Claim
17 words
The semiconductor device according to claim 1 wherein said semiconductor device is a liquid crystal display device.
Claim 4
Dependent Claim
16 words
The semiconductor device according to claim 1 wherein said semiconductor device is an EL display device.
Claim 5
Dependent Claim
30 words
The semiconductor device according to claim 1 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 6
Dependent Claim
25 words
The semiconductor device according to claim 1 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 7
Dependent Claim
21 words
The semiconductor device according to claim 1 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 8
Dependent Claim
129 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon nitride formed on said first insulating film; an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 9
Dependent Claim
129 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon nitride formed on said first insulating film; an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 10
Dependent Claim
17 words
The semiconductor device according to claim 7 wherein said semiconductor device is a liquid crystal display device.
Claim 11
Dependent Claim
16 words
The semiconductor device according to claim 7 wherein said semiconductor device is an EL display device.
Claim 12
Dependent Claim
30 words
The semiconductor device according to claim 7 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 13
Dependent Claim
25 words
The semiconductor device according to claim 7 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 14
Dependent Claim
21 words
The semiconductor device according to claim 7 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 15
Dependent Claim
130 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon oxynitride formed on said first insulating film; and an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 16
Dependent Claim
130 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon oxynitride formed on said first insulating film; and an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 17
Dependent Claim
17 words
The semiconductor device according to claim 13 wherein said semiconductor device is a liquid crystal display device.
Claim 18
Dependent Claim
16 words
The semiconductor device according to claim 13 wherein said semiconductor device is an EL display device.
Claim 19
Dependent Claim
29 words
The semiconductor device according to claim 13 wherein said thin film transistor-has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 20
Dependent Claim
25 words
The semiconductor device according to claim 13 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 21
Dependent Claim
21 words
The semiconductor device according to claim 13 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 22
Dependent Claim
145 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element; a source line formed on said first interlayer insulating film and electrically connected to said switching element; a second interlayer insulating film comprising silicon nitride formed over said source line; an organic resin film formed on said second interlayer insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 23
Dependent Claim
145 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element; a source line formed on said first interlayer insulating film and electrically connected to said switching element; a second interlayer insulating film comprising silicon nitride formed over said source line; an organic resin film formed on said second interlayer insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 24
Dependent Claim
30 words
The semiconductor device according to claim 19 wherein said first interlayer insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and a laminate thereof.
Claim 25
Dependent Claim
17 words
The semiconductor device according to claim 19 wherein said semiconductor device is a liquid crystal display device.
Claim 26
Dependent Claim
16 words
The semiconductor device according to claim 19 wherein said semiconductor device is an EL display device.
Claim 27
Dependent Claim
30 words
The semiconductor device according to claim 19 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 28
Dependent Claim
28 words
The semiconductor device according to claim 19 wherein said organic r e sin film comprises a material s elected from the group consisting of polyamide and acrylic resins.
Claim 29
Dependent Claim
21 words
The semiconductor device according to claim 19 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 30
Dependent Claim
28 words
The semiconductor device according to claim 19 further comprising another interlayer insulating film comprising silicon oxide formed between said second interlayer insulating film and said organic resin film.
Claim 31
Dependent Claim
145 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element; a source live formed on said first interlayer insulating film and electrically connected to said switching element; a second interlayer insulating film comprising silicon oxynitride formed over said source line; an organic resin film formed on said second interlayer insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 32
Dependent Claim
145 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first interlayer insulating film formed over said switching element; a source live formed on said first interlayer insulating film and electrically connected to said switching element; a second interlayer insulating film comprising silicon oxynitride formed over said source line; an organic resin film formed on said second interlayer insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 33
Dependent Claim
30 words
The semiconductor device according to claim 27 wherein said first interlayer insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and a laminate thereof.
Claim 34
Dependent Claim
17 words
The semiconductor device according to claim 27 wherein said semiconductor device is a liquid crystal display device.
Claim 35
Dependent Claim
16 words
The semiconductor device according to claim 27 wherein said semiconductor device is an EL display device.
Claim 36
Dependent Claim
30 words
The semiconductor device according to claim 27 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 37
Dependent Claim
25 words
The semiconductor device according to claim 27 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 38
Dependent Claim
21 words
The semiconductor device according to claim 27 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 39
Dependent Claim
142 words
A semiconductor device comprising: a substrate; an underlying film comprising silicon oxynitride formed over said substrate; a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon nitride formed over said switching element, and a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 40
Dependent Claim
142 words
A semiconductor device comprising: a substrate; an underlying film comprising silicon oxynitride formed over said substrate; a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon nitride formed over said switching element, and a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 41
Dependent Claim
17 words
The semiconductor device according to claim 34 wherein said semiconductor device is a liquid crystal display device.
Claim 42
Dependent Claim
16 words
The semiconductor device according to claim 34 wherein said semiconductor device is an EL display device.
Claim 43
Dependent Claim
30 words
The semiconductor device according to claim 34 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 44
Dependent Claim
25 words
The semiconductor device according to claim 34 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 45
Dependent Claim
21 words
The semiconductor device according to claim 34 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 46
Dependent Claim
142 words
A semiconductor device comprising: a substrate; an underlying film comprising silicon oxynitride formed over said substrate; a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon oxynitride formed over said switching element; and a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 47
Dependent Claim
142 words
A semiconductor device comprising: a substrate; an underlying film comprising silicon oxynitride formed over said substrate; a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, an first insulating film comprising silicon oxynitride formed over said switching element; and a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 48
Dependent Claim
17 words
The semiconductor device according to claim 40 wherein said semiconductor device is a liquid crystal display device.
Claim 49
Dependent Claim
16 words
The semiconductor device according to claim 40 wherein said semiconductor device is an EL display device.
Claim 50
Dependent Claim
30 words
The semiconductor device according to claim 40 wherein said thin film transistor has at least one lightly doped region formed between said channel region and said pair of impurity regions.
Claim 51
Dependent Claim
25 words
The semiconductor device according to claim 40 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 52
Dependent Claim
21 words
The semiconductor device according to claim 40 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 53
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said first and second gate electrodes; a second insulating film comprising silicon oxynitride formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 54
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said first and second gate electrodes; a second insulating film comprising silicon oxynitride formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 55
Dependent Claim
21 words
The semiconductor device according to claim 46 wherein said semiconductor device is a driving circuit of a liquid crystal display device.
Claim 56
Dependent Claim
20 words
The semiconductor device according to claim 46 wherein said semiconductor device is a driving circuit of an EL display device.
Claim 57
Dependent Claim
25 words
The semiconductor device according to claim 46 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 58
Dependent Claim
21 words
The semiconductor device according to claim 46 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 59
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said first and second gate electrodes; a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 60
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said first and second gate electrodes; a second insulating film comprising silicon oxide formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 61
Dependent Claim
21 words
The semiconductor device according to claim 50 wherein said semiconductor device is a driving circuit of a liquid crystal display device.
Claim 62
Dependent Claim
20 words
The semiconductor device according to claim 50 wherein said semiconductor device is a driving circuit of an EL display device.
Claim 63
Dependent Claim
25 words
The semiconductor device according to claim 50 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 64
Dependent Claim
21 words
The semiconductor device according to claim 50 wherein a dielectric constant of said organic resin film is not larger than 3.
Claim 65
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon oxide formed over said first and second gate electrodes; a second insulating film comprising silicon oxynitride formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 66
Dependent Claim
140 words
A semiconductor device comprising: at least first and second semiconductor islands formed on an insulating surface wherein said first semiconductor island has at least one pair of n-type impurity regions therein and said second semiconductor island has at least one pair of p-type impurity regions therein; a gate insulating film formed on said first and second semiconductor islands; first and second gate electrodes formed over said first and second semiconductor islands, respectively with said gate insulating film interposed therebetween; a first insulating film comprising silicon oxide formed over said first and second gate electrodes; a second insulating film comprising silicon oxynitride formed on said first insulating film; an organic resin film formed over said second insulating film; at least first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively.
Claim 67
Dependent Claim
21 words
The semiconductor device according to claim 56 wherein said semiconductor device is a driving circuit of a liquid crystal display device.
Claim 68
Dependent Claim
20 words
The semiconductor device according to claim 56 wherein said semiconductor device is a driving circuit of an EL display device.
Claim 69
Dependent Claim
25 words
The semiconductor device according to claim 56 wherein said organic resin film comprises a material selected from the group consisting of polyamide and acrylic resins.
Claim 70
Dependent Claim
21 words
The semiconductor device according to claim 56 wherein a dielectric constant of said organic resin film is not larger than 3.
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