US5289016A
Expired / Lapsed
US
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Thin film transistor with excellent stability for liquid crystal display
Assignee: Tianma Japan Ltd
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Filing: 1991-04-24
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Granted: 1994-02-22
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Expires: 2011-04-24
Abstract
Abstract The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on a glass substrate, and comprises a nondoped amorphous silicon film as a channel region just above the gate electrode, and a borosilicate glass film formed on the amorphous silicon film. Preferably, the transistor further includes a silicon nitride film formed over the borosilicate glass film.
Inventors
- 👤 Kesao Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
54 words
A thin film transistor, comprising: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 2
Dependent Claim
54 words
A thin film transistor, comprising: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 3
Dependent Claim
24 words
A thin film transistor as recited in claim 1, further comprising a gate insulating film formed between said gate electrode and said semiconductor layer.
Claim 4
Dependent Claim
18 words
A thin film transistor as recited in claim 2, wherein said semiconductor layer is a noncrystallized silicon film.
Claim 5
Dependent Claim
18 words
A thin film transistor as recited in claim 3, wherein said semiconductor layer is an amorphous silicon film.
Claim 6
Dependent Claim
19 words
A thin film transistor as recited in claim 4, wherein said semiconductor layer is a nondoped amorphous silicon film.
Claim 7
Dependent Claim
39 words
A thin film transistor as recited in claim 5, further comprising an n + amorphous silicon layer formed between said nondoped amorphous silicon film and said source electrode and between said nondoped amorphous silicon film and said drain electrode.
Claim 8
Dependent Claim
80 words
A liquid crystal display, comprising: a plurality of pixel electrodes and a plurality of thin film transistors respectively connected to said pixel electrodes, wherein each of said thin film transistors includes: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 9
Dependent Claim
80 words
A liquid crystal display, comprising: a plurality of pixel electrodes and a plurality of thin film transistors respectively connected to said pixel electrodes, wherein each of said thin film transistors includes: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 10
Dependent Claim
31 words
A liquid crystal display as recited in claim 7, wherein each of said thin film transistors further comprising a gate insulating film formed between said gate electrode and said semiconductor layer.
Claim 11
Dependent Claim
25 words
A liquid crystal display as recited in claim 8, wherein said semiconductor layer of each of said thin film transistors is a noncrystallized silicon film.
Claim 12
Dependent Claim
25 words
A liquid crystal display as recited in claim 9, wherein said semiconductor layer of each of said thin film transistors is an amorphous silicon film.
Claim 13
Dependent Claim
26 words
A liquid crystal display as recited in claim 10, wherein said semiconductor layer of each of said thin film transistors is a nondoped amorphous silicon film.
Claim 14
Dependent Claim
46 words
A liquid crystal display as recited in claim 11, wherein each of said thin film transistors further comprising an n + amorphous silicon layer formed between said nondoped amorphous silicon film and said source electrode and between said nondoped amorphous silicon film and said drain electrode.
References Cited (Backward Citations)
US4834507A
Cited
US4864376A
Cited
US4821092A
Cited
US4997262A
Cited
US5103330A
Cited
JPH01276768A
Cited
JPH01276767A
Cited
US5076666A
Cited
US5041888A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |