Patent US5289016A successfully refreshed from Google Patents.
US5289016A
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US
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Thin film transistor with excellent stability for liquid crystal display
Assignee: Tianma Japan Ltd
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Filing: 1991-04-24
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Granted: 1994-02-22
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Expires: 2011-04-24
Abstract
Abstract The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on a glass substrate, and comprises a nondoped amorphous silicon film as a channel region just above the gate electrode, and a borosilicate glass film formed on the amorphous silicon film. Preferably, the transistor further includes a silicon nitride film formed over the borosilicate glass film.
Inventors
- 👤 Kesao Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
54 words
A thin film transistor, comprising: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 2
Dependent Claim
54 words
A thin film transistor, comprising: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 3
Dependent Claim
24 words
A thin film transistor as recited in claim 1, further comprising a gate insulating film formed between said gate electrode and said semiconductor layer.
Claim 4
Dependent Claim
18 words
A thin film transistor as recited in claim 2, wherein said semiconductor layer is a noncrystallized silicon film.
Claim 5
Dependent Claim
18 words
A thin film transistor as recited in claim 3, wherein said semiconductor layer is an amorphous silicon film.
Claim 6
Dependent Claim
19 words
A thin film transistor as recited in claim 4, wherein said semiconductor layer is a nondoped amorphous silicon film.
Claim 7
Dependent Claim
39 words
A thin film transistor as recited in claim 5, further comprising an n + amorphous silicon layer formed between said nondoped amorphous silicon film and said source electrode and between said nondoped amorphous silicon film and said drain electrode.
Claim 8
Dependent Claim
80 words
A liquid crystal display, comprising: a plurality of pixel electrodes and a plurality of thin film transistors respectively connected to said pixel electrodes, wherein each of said thin film transistors includes: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 9
Dependent Claim
80 words
A liquid crystal display, comprising: a plurality of pixel electrodes and a plurality of thin film transistors respectively connected to said pixel electrodes, wherein each of said thin film transistors includes: a gate electrode; a semiconductor layer formed on said gate electrode; a source electrode and a drain electrode formed on said semiconductor layer; a borosilicate glass film formed on said semiconductor layer and said source and drain electrodes; and a silicon nitride film formed on said borosilicate glass film.
Claim 10
Dependent Claim
31 words
A liquid crystal display as recited in claim 7, wherein each of said thin film transistors further comprising a gate insulating film formed between said gate electrode and said semiconductor layer.
Claim 11
Dependent Claim
25 words
A liquid crystal display as recited in claim 8, wherein said semiconductor layer of each of said thin film transistors is a noncrystallized silicon film.
Claim 12
Dependent Claim
25 words
A liquid crystal display as recited in claim 9, wherein said semiconductor layer of each of said thin film transistors is an amorphous silicon film.
Claim 13
Dependent Claim
26 words
A liquid crystal display as recited in claim 10, wherein said semiconductor layer of each of said thin film transistors is a nondoped amorphous silicon film.
Claim 14
Dependent Claim
46 words
A liquid crystal display as recited in claim 11, wherein each of said thin film transistors further comprising an n + amorphous silicon layer formed between said nondoped amorphous silicon film and said source electrode and between said nondoped amorphous silicon film and said drain electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |