US5500538A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electro-optical device and method of driving the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-09-29
•
Granted: 1996-03-19
•
Expires: 2014-09-29
Abstract
Abstract An electro-optical device is disclosed. The electro-optical device comprises pixels arranged in rows and columns. Each pixel comprises at least one complementary TFT (thin film transistor) pair. Each complementary TFT pair consists of an n-channel TFT and a p-channel TFT. The gates of the complementary TFTs of each pixel are all connected to a signal line extending in the Y-direction. The input terminals of the TFTs of each pixel are connected to a pair of signal lines extending in the X-direction. Each pixel has at least one pixel electrode connected to the outputs of the TFTs thereof. In the operation of the electro-optical device, an electric signal is applied to the pair of signal lines extending in the X-direction and an electric signal is applied to the signal line extending in the Y-direction for the duration of the electric signal applied to the pair of signal lines extending in the X-direction.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:43
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D86/00; H10D86/40; H10D86/60; G02F1/136245; H10D30/674
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
44 words
An electro-optical device comprising: a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein at least a channel of each of said thin film transistors contains oxygen at 4×10 19 to 4×10 21 atoms/cm 3 .
Claim 2
Dependent Claim
44 words
An electro-optical device comprising: a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein at least a channel of each of said thin film transistors contains oxygen at 4×10 19 to 4×10 21 atoms/cm 3 .
Claim 3
Dependent Claim
16 words
The device of claim 1 wherein said substrate comprises glass covered with a silicon oxide layer.
Claim 4
Dependent Claim
21 words
The device of claim 1 wherein each said thin film transistor has a gate insulating comprising silicon oxide doped with fluorine.
Claim 5
Dependent Claim
10 words
The device of claim 1 wherein said channel comprises silicon.
Claim 6
Dependent Claim
12 words
The device of claim 4 wherein said silicon is doped with hydrogen.
Claim 7
Dependent Claim
63 words
An electro-optical device comprising: a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein a channel of each of said thin film transistors contains oxygen at 5×10 20 to 5×10 21 atoms/cm 3 and a source and a drain of each of said thin film transistors contains oxygen at 7×10 19 atoms/cm 3 or less.
Claim 8
Dependent Claim
63 words
An electro-optical device comprising: a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein a channel of each of said thin film transistors contains oxygen at 5×10 20 to 5×10 21 atoms/cm 3 and a source and a drain of each of said thin film transistors contains oxygen at 7×10 19 atoms/cm 3 or less.
Claim 9
Dependent Claim
16 words
The device of claim 6 wherein said substrate comprises glass covered with a silicon oxide layer.
Claim 10
Dependent Claim
21 words
The device of claim 6 wherein each said thin film transistor has a gate insulating comprising silicon oxide doped with fluorine.
Claim 11
Dependent Claim
10 words
The device of claim 6 wherein said channel comprises silicon.
Claim 12
Dependent Claim
12 words
The device of claim 6 wherein said silicon is doped with hydrogen.
Claim 13
Dependent Claim
56 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 4×10 19 to 4×10 21 atoms/cm 3 .
Claim 14
Dependent Claim
56 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 4×10 19 to 4×10 21 atoms/cm 3 .
Claim 15
Dependent Claim
16 words
The device of claim 11 wherein said substrate comprises glass covered with a silicon oxide layer.
Claim 16
Dependent Claim
21 words
The device of claim 11 wherein each said thin film transistor has a gate insulating comprising silicon oxide doped with fluorine.
Claim 17
Dependent Claim
10 words
The device of claim 11 wherein said channel comprises silicon.
Claim 18
Dependent Claim
12 words
The device of claim 14 wherein said silicon is doped with hydrogen.
Claim 19
Dependent Claim
71 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 5×10 20 to 5×10 21 atoms/cm 3 and a source and a drain thereof contains oxygen at 7×10 19 atoms/cm 3 or less.
Claim 20
Dependent Claim
71 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 5×10 20 to 5×10 21 atoms/cm 3 and a source and a drain thereof contains oxygen at 7×10 19 atoms/cm 3 or less.
Claim 21
Dependent Claim
16 words
The device of claim 16 wherein said substrate comprises glass covered with a silicon oxide layer.
Claim 22
Dependent Claim
21 words
The device of claim 16 wherein each said thin film transistor has a gate insulating comprising silicon oxide doped with fluorine.
Claim 23
Dependent Claim
10 words
The device of claim 16 wherein said channel comprises silicon.
Claim 24
Dependent Claim
12 words
The device of claim 19 wherein said silicon is doped with hydrogen.
Claim 25
Dependent Claim
81 words
An active matrix display device comprising: a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit include channel semiconductor layers having at least one of an electron mobility of 15-300 cm 2 /V·s and a hole mobility of 10-200 cm 2 /V·s.
Claim 26
Dependent Claim
81 words
An active matrix display device comprising: a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit include channel semiconductor layers having at least one of an electron mobility of 15-300 cm 2 /V·s and a hole mobility of 10-200 cm 2 /V·s.
Claim 27
Dependent Claim
28 words
The device of claim 21 wherein said channel semiconductor layers comprise silicon in which oxygen is contained at a concentration not higher than 7×10 19 atoms/cm 3 .
Claim 28
Dependent Claim
78 words
An active matrix display device comprising: a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit have a channel semiconductor layer comprising silicon in which oxygen is contained at a concentration not higher than 7×10 19 atoms/cm 3 .
Claim 29
Dependent Claim
78 words
An active matrix display device comprising: a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit have a channel semiconductor layer comprising silicon in which oxygen is contained at a concentration not higher than 7×10 19 atoms/cm 3 .
References Cited (Backward Citations)
JPS53144297A
Cited
US5082351A
Cited
US4818077A
Cited
JPS6396636A
Cited
US5132820A
Cited
JPS6468724A
Cited
JPH01107237A
Cited
US5383041A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |