US5821138A — Method of manufacturing a semiconductor device us…

Claim 1

Independent Claim 117 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 2

Independent Claim 117 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 3

Dependent Claim 38 words

The method of claim 1 wherein one kind or plural kinds of elements selected from Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au are used for the metal element that promotes the crystallization of silicon.

Claim 4

Dependent Claim 48 words

The method of claim 1 wherein the crystalline silicon film contains the metal element that promotes the crystallization of silicon at a density of 1×10 14 to 5×10 18 atm cm -3 therein, and contains hydrogen and/or halogen at a density of 0.0005 to 5 atms % therein.

Claim 5

Dependent Claim 19 words

The method of claim 1 wherein the first substrate is formed of a glass substrate or a quartz substrate.

Claim 6

Dependent Claim 21 words

The method of claim 1 wherein the second substrate has a translucent property and is formed of a flexible resin substrate.

Claim 7

Dependent Claim 13 words

The method of claim 3 wherein said halogen is fluorine, chlorine or bromine.

Claim 8

Independent Claim 130 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate having a groove formed in a surface thereof; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film by using an etching solvent to peel off said first substrate.

Claim 9

Independent Claim 130 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate having a groove formed in a surface thereof; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film by using an etching solvent to peel off said first substrate.

Claim 10

Dependent Claim 38 words

The method of claim 7 wherein one kind or plural kinds of elements selected from Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au are used for the metal element that promotes the crystallization of silicon.

Claim 11

Dependent Claim 48 words

The method of claim 7 wherein the crystalline silicon film contains the metal element that promotes the crystallization of silicon at a density of 1×10 14 to 5×10 18 atm cm -3 therein, and contains hydrogen and/or halogen at a density of 0.0005 to 5 atms % therein.

Claim 12

Dependent Claim 19 words

The method of claim 7 wherein the first substrate is formed of a glass substrate or a quartz substrate.

Claim 13

Dependent Claim 21 words

The method of claim 7 wherein the second substrate has a translucent property and is formed of a flexible resin substrate.

Claim 14

Independent Claim 154 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate having a groove formed in a surface thereof; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film by using an etching solvent to peel off said first substrate, wherein a gap is defined between a bottom portion of said groove and said first insulating film, and said etching solvent enters said gap.

Claim 15

Independent Claim 154 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate having a groove formed in a surface thereof; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film by using an etching solvent to peel off said first substrate, wherein a gap is defined between a bottom portion of said groove and said first insulating film, and said etching solvent enters said gap.

Claim 16

Dependent Claim 38 words

The method of claim 12 wherein one kind or plural kinds of elements selected from Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au are used for the metal element that promotes the crystallization of silicon.

Claim 17

Dependent Claim 48 words

The method of claim 12 wherein the crystalline silicon film contains the metal element that promotes the crystallization of silicon at a density of 1×10 14 to 5×10 18 atm cm -3 therein, and contains hydrogen and/or halogen at a density of 0.0005 to 5 atms % therein.

Claim 18

Dependent Claim 19 words

The method of claim 12 wherein the first substrate is formed of a glass substrate or a quartz substrate.

Claim 19

Dependent Claim 21 words

The method of claim 12 wherein the second substrate has a translucent property and is formed of a flexible resin substrate.

Claim 20

Dependent Claim 13 words

The method of claim 14 wherein said halogen is fluorine, chlorine or bromine.

Claim 21

Independent Claim 138 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a monocrystal-like region or substantially monocrystal-like region; forming a thin-film transistor by using the monocrystal-like region or substantially monocrystal-like region as an active layer; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 22

Independent Claim 138 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a monocrystal-like region or substantially monocrystal-like region; forming a thin-film transistor by using the monocrystal-like region or substantially monocrystal-like region as an active layer; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 23

Dependent Claim 41 words

The method of claim 18 wherein the second substrate comprises a resin substrate having a translucent property and a flexibility, and a stress in the active layer is relaxed by conducting a heat treatment after the irradiation of a laser beam.

Claim 24

Independent Claim 79 words

A method of manufacturing a semiconductor device, wherein the monocrystal-like region or substantially monocrystal-like region contains substantially no grain boundary therein, contains hydrogen and/or halogen atoms for compensating a defect at a density of 1×10 15 to 1×10 20 cm -3 therein, also contains carbon and nitrogen atoms at a density of 1×10 16 to 5×10 18 atms cm -3 , and further contains oxygen atoms at a density of 1×10 17 to 5×10 19 atms cm -3 .

Claim 25

Independent Claim 79 words

A method of manufacturing a semiconductor device, wherein the monocrystal-like region or substantially monocrystal-like region contains substantially no grain boundary therein, contains hydrogen and/or halogen atoms for compensating a defect at a density of 1×10 15 to 1×10 20 cm -3 therein, also contains carbon and nitrogen atoms at a density of 1×10 16 to 5×10 18 atms cm -3 , and further contains oxygen atoms at a density of 1×10 17 to 5×10 19 atms cm -3 .

Claim 26

Independent Claim 136 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a region having a crystalline property; forming a thin-film transistor by using the region having the crystalline property as an active layer; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 27

Independent Claim 136 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film; irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a region having a crystalline property; forming a thin-film transistor by using the region having the crystalline property as an active layer; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 28

Dependent Claim 37 words

The method of claim 21 wherein the second substrate comprises a resin substrate having a flexibility and a stress in the active layer is relaxed by conducting a heat treatment after the irradiation of a laser beam.

Claim 29

Independent Claim 178 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate comprising quartz; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; providing in contact with a surface of said amorphous silicon film a metal element that promotes the crystallization of silicon; crystallizing said amorphous silicon film by heating to obtain a crystalline silicon film; subjecting said crystalline silicon film to thermal treatment in an oxidizing atmosphere containing a halogen element to form a thermal oxide film on a surface of said crystalline silicon film and to getter said metal element into said thermal oxide film in order to remove or reduce the metal element present in said crystalline silicon film; removing said thermal oxide film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 30

Independent Claim 178 words

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a first substrate comprising quartz; forming a second insulating film on said first insulating film; forming an amorphous silicon film on said second insulating film; providing in contact with a surface of said amorphous silicon film a metal element that promotes the crystallization of silicon; crystallizing said amorphous silicon film by heating to obtain a crystalline silicon film; subjecting said crystalline silicon film to thermal treatment in an oxidizing atmosphere containing a halogen element to form a thermal oxide film on a surface of said crystalline silicon film and to getter said metal element into said thermal oxide film in order to remove or reduce the metal element present in said crystalline silicon film; removing said thermal oxide film; forming a thin-film transistor using said crystalline silicon film; forming a sealing layer that seals said thin-film transistor; bonding a second substrate having a translucent property to said sealing layer; and removing said first insulating film to peel off said first substrate.

Claim 31

Dependent Claim 39 words

The method of claim 23 wherein said thin-film transistor forming step comprises: patterning said crystalline silicon film into an active layer of said thin film transistor; and forming said thermal oxide film on a surface of said active layer.

Claim 32

Dependent Claim 37 words

The method of claim 23 wherein one element or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au are used for said metal element.

Claim 33

Dependent Claim 35 words

The method of claim 23 wherein said oxidizing atmosphere comprises a gas or a plurality of gases selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2 and Br 2 .

Claim 34

Dependent Claim 14 words

The method of claim 23 wherein said second substrate comprises a transparent flexible resin.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-10-12	2002-04-13	2002-10-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-10-12	2006-04-13	2006-10-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-10-12	2010-04-13	2010-10-13	$7700.00	Window Closed / Lapsed

Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding

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