US5091334A
Expired / Lapsed
US
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Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-03-05
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Granted: 1992-02-25
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Expires: 2010-03-05
Abstract
Abstract A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semiconductor region formed primarily of semi-amorphous semiconductor. The second semiconductor region has a higher degree of conductivity than the first semiconductor region so that a semiconductor element may be formed.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yujiro Nagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D62/834; H10F; H10F19/00; H10F19/30; H10F19/31; H10F19/35; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
114 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said non-crystalline semiconductor to a semi-amorphous semiconductor which is in a stable state intermediate the amorphous state and the single crystal state of the semiconductor and which has a lattice strain, thereby forming at least said channel region; and doping at least said semi-amorphous semiconductor with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 2
Dependent Claim
114 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said non-crystalline semiconductor to a semi-amorphous semiconductor which is in a stable state intermediate the amorphous state and the single crystal state of the semiconductor and which has a lattice strain, thereby forming at least said channel region; and doping at least said semi-amorphous semiconductor with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 3
Dependent Claim
17 words
The method of claim 1, wherein said converting step is implemented by exposing light to said portion.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein said converting step is implemented by applying heat to said portion.
Claim 5
Dependent Claim
18 words
The method of claim 3, wherein said heat is induced by applying an electric current through said portion.
Claim 6
Dependent Claim
99 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said semiconductor to a semi-amorphous structure, the diffusion length of which is at least 1 μm thereby forming at least said channel region; and doping at least said semi-amorphous structure with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 7
Dependent Claim
99 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said semiconductor to a semi-amorphous structure, the diffusion length of which is at least 1 μm thereby forming at least said channel region; and doping at least said semi-amorphous structure with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 8
Dependent Claim
17 words
The method of claim 5 wherein said converting step is implemented by exposing light to said portion.
Claim 9
Dependent Claim
17 words
The method of claim 5 wherein said converting step is implemented by applying heat to said portion.
Claim 10
Dependent Claim
18 words
The method of claim 7 wherein said heat is induced by applying an electric current through said portion.
Claim 11
Dependent Claim
115 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said non-crystalline semiconductor to a semi-amorphous semiconductor which is in a stable state intermediate the amorphous state and the single crystal state of the semiconductor and which has a lattice strain, thereby forming said source, drain and channel region; and doping at least said semi-amorphous semiconductor with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 12
Dependent Claim
115 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; converting at least a portion of said non-crystalline semiconductor to a semi-amorphous semiconductor which is in a stable state intermediate the amorphous state and the single crystal state of the semiconductor and which has a lattice strain, thereby forming said source, drain and channel region; and doping at least said semi-amorphous semiconductor with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 13
Dependent Claim
17 words
The method of claim 9 wherein said converting step is implemented by exposing light to said portion.
Claim 14
Dependent Claim
17 words
The method of claim 9 wherein said converting step is implemented by applying heat to said portion.
Claim 15
Dependent Claim
18 words
The method of claim 11 wherein said heat is induced by applying an electric current through said portion.
Claim 16
Dependent Claim
103 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; and converting at least a portion of said semiconductor to a semi-amorphous structure, the diffusion length of which semi-amorphous semiconductor is at least one μm, thereby forming said source, drain and channel regions; and doping at least said semi-amorphous structure with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 17
Dependent Claim
103 words
In a method of forming a MIS FET comprising source, drain and channel regions formed on an insulating substrate wherein the conductivity type of said channel region is substantially intrinsic or opposite to that of said source and drain regions, the improvement comprising the steps of: forming a non-crystalline semiconductor on said insulating substrate; and converting at least a portion of said semiconductor to a semi-amorphous structure, the diffusion length of which semi-amorphous semiconductor is at least one μm, thereby forming said source, drain and channel regions; and doping at least said semi-amorphous structure with a dangling bond neutralizer comprising hydrogen or halogen.
Claim 18
Dependent Claim
17 words
The method of claim 13, wherein said converting step is implemented by exposing light to said portion.
Claim 19
Dependent Claim
17 words
The method of claim 13, wherein said converting step is implemented by applying heat to said portion.
Claim 20
Dependent Claim
18 words
The method of claim 15, wherein said heat is induced by applying an electric current through said portion.
Claim 21
Dependent Claim
12 words
The method of claim 5 where the diffusion length is 1-50 microns.
Claim 22
Dependent Claim
12 words
The method of claim 13 where the diffusion length is 1-50 microns.
Claim 23
Dependent Claim
20 words
The method of claim 1 where the doping level of the dangling bond neutralizer is less than 5 mol %.
Claim 24
Dependent Claim
20 words
The method of claim 5 where the doping level of the dangling bond neutralizer is less than 5 mol %.
Claim 25
Dependent Claim
20 words
The method of claim 9 where the doping level of the dangling bond neutralizer is less than 5 mol %.
Claim 26
Dependent Claim
20 words
The method of claim 13 where the doping level of the dangling bond neutralizer is less than 5 mol %.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |