US4254429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hetero junction semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1979-07-09
•
Granted: 1981-03-03
•
Expires: 1999-07-09
Abstract
Abstract A hetero junction semiconductor device having at least one inter-semiconductor hetero junction, which has at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap and a third non-single-crystal semiconductor region serving as the hetero junction formed to extend between the first and second semiconductor regions and having an energy gap continuously changing from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and in which the first, second and third semiconductor regions are doped with recombination center neutralizers.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:27
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10F30/22; H10F30/222; H10F30/223; H10F30/2235; H10F30/24; H10F30/245
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
117 words
A hetero junction semiconductor device having at least one inter-semiconductor hetero junction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap, and a third non-single-crystal semiconductor region defined between the first and second semiconductor regions to serve as a hetero junction, and wherein the third semiconductor region has an energy gap which successively changes from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and wherein the first, second and third semiconductor regions have doped therein a recombination center neutralizer.
Claim 2
Dependent Claim
117 words
A hetero junction semiconductor device having at least one inter-semiconductor hetero junction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap, and a third non-single-crystal semiconductor region defined between the first and second semiconductor regions to serve as a hetero junction, and wherein the third semiconductor region has an energy gap which successively changes from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and wherein the first, second and third semiconductor regions have doped therein a recombination center neutralizer.
Claim 3
Dependent Claim
41 words
A hetero junction semiconductor device according to claim 1, wherein the first semiconductor region has any one of p-type, n-type and i-type conductivity types, and the second semiconductor region has a conductivity type different from that of the first semiconductor region.
Claim 4
Dependent Claim
26 words
A hetero junction semiconductor device accoring to claim 1, wherein the recombination center neutralizer is one or more of hydrogen, deuterium, chlorine, fluorine, bromine and halogenide.
Claim 5
Dependent Claim
45 words
A hetero junction semiconductor device according to claim 1, wherein each of the first, second and third semiconductor regions is formed of a material selected from a group consisting of silicon, germanium, silicon carbides, germanium carbides, silicon nitrides, germanium nitrides, silicon oxides and germanium oxides.
Claim 6
Dependent Claim
82 words
A hetero junction semiconductor device according to claim 1, wherein the first semiconductor region is formed of Si x C 1-x (where 0.5<x<1), wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of Si y C 1-y (where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region).
Claim 7
Dependent Claim
82 words
A hetero junction semiconductor device according to claim 1, wherein the first semiconductor region is formed of Si 3 N 4-x (where 0<x<4), wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of Si 3 N 4-y (where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region).
Claim 8
Dependent Claim
78 words
A hetero junction semiconductor device according to claim 1, wherein the first semiconductor region is formed of SiO 2-x (where 0<x<2), wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of SiO 2-y (where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-02 | 1984-09-01 | 1985-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-02 | 1988-09-01 | 1989-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-02 | 1992-09-01 | 1993-03-03 | $7700.00 | Window Closed / Lapsed |