Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics
Abstract
Abstract DESCRIBED ARE BULK SEMICONDUCTOR SWITCHING DEVICES HAVING SYMMETRICAL SWITCHING CHARACTERISTICS WITH AN ASSOCIATED CURRENT CONTROLLED NEGATIVE RESISTANCE, AND FORMED FROM AMORPHOUS GLASS-TYPE SUBSTANCES. THE DEVICES OF THE INVENTION CAN BE READILY FABRICATED ON SMALL, INTEGRATED CIRCUITS AND ARE FORMED BY DEPOSITING ON A SEMICONDUCTIVE SUBSTRATE SUCCESSIVE LAYERS WHICH ARE SUBSEQUENTLY HEAT TREATED TO FORM AN AMORPHOUS SEMICONDUCTIVE GLASS, THESE LAYERS COMPRISING SILICON DIOXIDE, LEAD OXIDE AND A MATERIAL SELECTED FROM THE GROUP CONSISTING OF CHROMIUM-CHROMIUM OXIDE, VANADIUM-VANADIUM OXIDE AND MOLYBDENUM-MOLYBDENUM OXIDE. ALSO DESCRIBED IS A METHOD FOR MANUFACTURING SUCH SEMICONDUCTING GLASSES.
Inventors
- 👤 William S Corak
- 👤 David S Herman
Bibliographic Details
Claims Analysis
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