US5654203A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-06-07
•
Granted: 1997-08-05
•
Expires: 2015-06-07
Abstract
Abstract In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.
Inventors
- 👤 Hisashi Ohtani
- 👤 Hiroki Adachi
- 👤 Akiharu Miyanaga
- 👤 Toru Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
51 words
A method for fabricating a semiconductor device, comprising: forming a mask on a surface of an amorphous silicon film using a resist; maintaining a compound containing a catalyst element which accelerates crystallization in contact with an exposed portion of the amorphous silicon film; removing the resist mask; and conducting heat treatment.
Claim 2
Independent Claim
51 words
A method for fabricating a semiconductor device, comprising: forming a mask on a surface of an amorphous silicon film using a resist; maintaining a compound containing a catalyst element which accelerates crystallization in contact with an exposed portion of the amorphous silicon film; removing the resist mask; and conducting heat treatment.
Claim 3
Independent Claim
76 words
A method for fabricating a semiconductor device, comprising: forming a mask on a surface of an amorphous silicon film using a resist; preparing a solution containing a catalyst element which accelerates crystallization of the amorphous silicon film; maintaining said solution in contact with an exposed portion of the amorphous silicon film to form a uniform film containing said catalyst element therein on the amorphous silicon film; removing the resist mask, and then crystallizing said silicon film.
Claim 4
Independent Claim
76 words
A method for fabricating a semiconductor device, comprising: forming a mask on a surface of an amorphous silicon film using a resist; preparing a solution containing a catalyst element which accelerates crystallization of the amorphous silicon film; maintaining said solution in contact with an exposed portion of the amorphous silicon film to form a uniform film containing said catalyst element therein on the amorphous silicon film; removing the resist mask, and then crystallizing said silicon film.
Claim 5
Dependent Claim
46 words
A method for fabricating a semiconductor device as claimed in claim 1 or in claim 2, wherein, at least one of the elements selected from Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pd, Sn, Pd, P, As, and Sb is used as the catalyst element.
Claim 6
Dependent Claim
46 words
A method for fabricating a semiconductor device as claimed in claim 1 or in claim 2, wherein, at least one of the elements selected from the elements belonging to the Group VIII, IIIb, IVb, and Vb of the periodic table is used as the catalyst element.
Claim 7
Dependent Claim
36 words
A method for fabricating a semiconductor device as claimed in claim 1 or in claim 2, wherein, the semiconductor device fabricated in the active region is a thin film transistor, a diode, or a photo sensor.
Claim 8
Dependent Claim
42 words
A method for fabricating a semiconductor device as claimed in claim 1 or in claim 2, wherein, the catalyst element is present in said active layer region in a concentration of from 1×10 16 atoms.cm -3 to 1×10 -19 atoms.cm -3 .
Claim 9
Dependent Claim
35 words
A method for fabricating a semiconductor device as claimed in claim 1 or in claim 2, wherein, the active region comprises at least one selected from the group consisting of PI, PN, and NI junctions.
Claim 10
Independent Claim
74 words
A method for fabricating a semiconductor device, comprising: maintaining an amorphous silicon film in contact with a single catalyst element which accelerates crystallization of the amorphous silicon film or a compound containing the catalyst element by holding said pure catalyst element or said compound containing the catalyst element on said amorphous silicon film comprising selectively exposed portions using a resist pattern, while applying heat treatment to the structure to crystallize said amorphous silicon film.
Claim 11
Independent Claim
74 words
A method for fabricating a semiconductor device, comprising: maintaining an amorphous silicon film in contact with a single catalyst element which accelerates crystallization of the amorphous silicon film or a compound containing the catalyst element by holding said pure catalyst element or said compound containing the catalyst element on said amorphous silicon film comprising selectively exposed portions using a resist pattern, while applying heat treatment to the structure to crystallize said amorphous silicon film.
Claim 12
Dependent Claim
40 words
A method for fabricating a semiconductor device as claimed in claim 8, wherein, at least one of the elements selected from Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pd, P, As, and Sb is used as the catalyst element.
Claim 13
Dependent Claim
42 words
A method for fabricating a semiconductor device as claimed in claim 8, wherein, at least one of the elements selected from the elements belonging to the Group VIII, IIIb, IVb, and Vb of the periodic table is used as the catalyst element.
Claim 14
Dependent Claim
23 words
The method of claim 2 wherein said solution is obtained by dispersing or dissolving a compound of said catalyst element in a solvent.
Claim 15
Dependent Claim
12 words
The method of claim 2 wherein said solution further contains a surfactant.
Claim 16
Dependent Claim
24 words
The method of claim 2 wherein said solution is obtained by dispersing or dissolving a compound of said catalyst element in a non-polar solvent.
Claim 17
Independent Claim
75 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a resist mask; selectively disposing a solution containing a catalyst metal in contact with said semiconductor film in accordance with said resist mask; said catalyst metal being capable of promoting crystallization of said semiconductor film; removing said resist mask after drying said solution; and then crystallizing said semiconductor film.
Claim 18
Independent Claim
75 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a resist mask; selectively disposing a solution containing a catalyst metal in contact with said semiconductor film in accordance with said resist mask; said catalyst metal being capable of promoting crystallization of said semiconductor film; removing said resist mask after drying said solution; and then crystallizing said semiconductor film.
Claim 19
Dependent Claim
11 words
The method of claim 14 wherein said semiconductor film is amorphous.
Claim 20
Independent Claim
92 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a resist mask; selectively disposing a solution containing a catalyst metal in contact with said semiconductor film in accordance with said resist mask, said catalyst metal being capable of promoting crystallization of said semiconductor film; removing said resist mask after drying said solution; and then crystallizing said semiconductor film, wherein said solution is contacted with said semiconductor film through an oxide layer of said semiconductor film.
Claim 21
Independent Claim
92 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; providing said semiconductor film with a resist mask; selectively disposing a solution containing a catalyst metal in contact with said semiconductor film in accordance with said resist mask, said catalyst metal being capable of promoting crystallization of said semiconductor film; removing said resist mask after drying said solution; and then crystallizing said semiconductor film, wherein said solution is contacted with said semiconductor film through an oxide layer of said semiconductor film.
References Cited (Backward Citations)
US3856565A
Cited
US5075259A
Cited
US5147826A
Cited
US5403772A
Cited
US5275851A
Cited
US5488000A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-04 | 2001-02-03 | 2001-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-04 | 2005-02-03 | 2005-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-04 | 2009-02-03 | 2009-08-05 | $7700.00 | Window Closed / Lapsed |