US5844254A
Expired / Lapsed
US
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Planar thin film transistor structures
Assignee: Micron Technology Inc
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Filing: 1997-05-19
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Granted: 1998-12-01
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Expires: 2017-05-19
Abstract
Abstract The disclosure includes preferred semiconductor transistor devices utilizing thin film transistors, as well as preferred methods of forming such devices. Specifically, a bottom thin film transistor gate is formed having a top surface. An insulating filler is provided adjacent the thin film transistor gate to an elevation at least as high as the thin film transistor gate top surface, and subsequently levelled to provide generally planar insulating surfaces adjacent the thin film transistor gate. The planar insulating surfaces are substantially coplanar with the thin film transistor gate top surface. A planar semiconductor thin film is then formed over the thin film transistor gate and over the adjacent planar insulating surfaces. The thin film is doped to form source and drain regions of a thin film transistor which is bottom gated by the thin film transistor gate.
Inventors
- 👤 Monte Manning
- 👤 Charles Dennison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:39
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
159 words
A semiconductor transistor device formed on a semiconductor substrate, comprising: a transistor gate having a top surface; a transistor gate sidewall spacer against the transistor gate; a discrete conductor having a top surface which is substantially coplanar with the transistor gate top surface; a discrete conductor sidewall spacer against the discrete conductor; an insulating filler provided over the semiconductor substrate and against both the transistor gate sidewall spacer and the discrete conductor sidewall spacer, the insulating filler having generally planar upper insulating surfaces which are substantially coplanar with the top surfaces of the transistor gate and the discrete conductor, the insulating filler comprising a silicate; and a generally planar semiconductor thin film provided over the transistor gate, over the adjacent generally planar insulating surfaces, and at least partially over the discrete conductor, the generally planar semiconductor thin film being doped to form source and drain regions of a thin film transistor which is bottom gated by the transistor gate.
Claim 2
Dependent Claim
159 words
A semiconductor transistor device formed on a semiconductor substrate, comprising: a transistor gate having a top surface; a transistor gate sidewall spacer against the transistor gate; a discrete conductor having a top surface which is substantially coplanar with the transistor gate top surface; a discrete conductor sidewall spacer against the discrete conductor; an insulating filler provided over the semiconductor substrate and against both the transistor gate sidewall spacer and the discrete conductor sidewall spacer, the insulating filler having generally planar upper insulating surfaces which are substantially coplanar with the top surfaces of the transistor gate and the discrete conductor, the insulating filler comprising a silicate; and a generally planar semiconductor thin film provided over the transistor gate, over the adjacent generally planar insulating surfaces, and at least partially over the discrete conductor, the generally planar semiconductor thin film being doped to form source and drain regions of a thin film transistor which is bottom gated by the transistor gate.
Claim 3
Dependent Claim
35 words
A semiconductor transistor device in accordance with claim 1 and further comprising a nitride layer over the discrete conductor to reduce capacitive coupling between the discrete conductor and the overlying generally planar semiconductor thin film.
Claim 4
Dependent Claim
30 words
A semiconductor transistor device in accordance with claim 1 and further comprising a field isolation region on the semiconductor substrate, the discrete conductor being formed over the field isolation region.
Claim 5
Dependent Claim
46 words
A semiconductor transistor device in accordance with claim 1 and further comprising a recessed field isolation region on the semiconductor substrate, the semiconductor substrate and the field isolation region having upper surfaces which are substantially coplanar, the discrete conductor being formed over the field isolation region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-30 | 2002-06-01 | 2002-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-30 | 2006-06-01 | 2006-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-30 | 2010-06-01 | 2010-12-01 | $7700.00 | Window Closed / Lapsed |