US6252249B1
Expired / Lapsed
US
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Semiconductor device having crystalline silicon clusters
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-05-09
•
Granted: 2001-06-26
•
Expires: 2017-05-09
Abstract
Abstract A semiconductor device having a plurality of crystalline silicon clusters. The semiconductor device is formed on an insulating surface and includes crystalline silicon clusters anchored with each other with substantially no grain boundary therebetween.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:30
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/40; H10D86/441; H10D86/60; G02F1/13452; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245; G09; G09G; G09G2310/00; G09G2310/02; G09G2310/0264; G09G2310/0281
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
41 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
Claim 2
Dependent Claim
41 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1 wherein said semiconductor layer contains oxygen at a concentration not higher than 1×10 19 cm −3 .
Claim 4
Dependent Claim
20 words
A semiconductor device according to claim 1 wherein said crystalline silicon clusters are anchored with each other with Si—Si bonds.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein a carrier moves between the clusters via the anchoring.
Claim 6
Dependent Claim
34 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
Claim 7
Dependent Claim
34 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
Claim 8
Dependent Claim
24 words
A semiconductor device according to claim 5 wherein said semiconductor layer contains oxygen at a concentration not higher than 1×10 19 cm −3 .
Claim 9
Dependent Claim
20 words
A semiconductor device according to claim 5 wherein said crystalline silicon clusters are anchored with each other with Si—Si bonds.
Claim 10
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein a carrier moves between the clusters via the anchoring.
Claim 11
Dependent Claim
85 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer has a mobility in the range of 10 to 200 cm 2 /V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm 2 /V·sec in the case of an electron mobility.
Claim 12
Dependent Claim
85 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer has a mobility in the range of 10 to 200 cm 2 /V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm 2 /V·sec in the case of an electron mobility.
Claim 13
Dependent Claim
17 words
A semiconductor device according to claim 9 wherein a carrier moves between the clusters via the anchoring.
Claim 14
Dependent Claim
78 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer has a mobility in the range of 10 to 200 cm 2 /V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm 2 V·sec in the case of an electron mobility.
Claim 15
Dependent Claim
78 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer has a mobility in the range of 10 to 200 cm 2 /V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm 2 V·sec in the case of an electron mobility.
Claim 16
Dependent Claim
17 words
A semiconductor device according to claim 11 wherein a carrier moves between the clusters via the anchoring.
Claim 17
Dependent Claim
62 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side from 522 cm −1 .
Claim 18
Dependent Claim
62 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween, wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side from 522 cm −1 .
Claim 19
Dependent Claim
17 words
A semiconductor device according to claim 13 wherein a carrier moves between the clusters via the anchoring.
Claim 20
Dependent Claim
55 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side frog 522 cm −1 .
Claim 21
Dependent Claim
55 words
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side frog 522 cm −1 .
Claim 22
Dependent Claim
17 words
A semiconductor device according to claim 15 wherein a carrier moves between the clusters via the anchoring.
Claim 23
Dependent Claim
56 words
A thin film transistor comprising: a semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween; a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film.
Claim 24
Dependent Claim
56 words
A thin film transistor comprising: a semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween; a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film.
Claim 25
Dependent Claim
18 words
A thin film transistor according to claim 17 wherein a carrier moves between the clusters via the anchoring.
Claim 26
Dependent Claim
49 words
A thin film transistor comprising: A semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween; a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film.
Claim 27
Dependent Claim
49 words
A thin film transistor comprising: A semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween; a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film.
Claim 28
Dependent Claim
18 words
A thin film transistor according to claim 19 wherein a carrier moves between the clusters via the anchoring.
Claim 29
Dependent Claim
89 words
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising: A semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions, a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film, wherein said channel region comprises a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
Claim 30
Dependent Claim
89 words
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising: A semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions, a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film, wherein said channel region comprises a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
Claim 31
Dependent Claim
17 words
A CMOS device according to claim 21 wherein a carrier moves between the clusters via the anchoring.
Claim 32
Dependent Claim
82 words
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising: a semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions, a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film, wherein said channel region comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
Claim 33
Dependent Claim
82 words
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising: a semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions, a gate insulating film on said semiconductor layer; and a gate electrode on said gate insulating film, wherein said channel region comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
Claim 34
Dependent Claim
17 words
A CMOS device according to claim 23 wherein a carrier moves between the clusters via the anchoring.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-25 | 2004-12-25 | 2005-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-25 | 2008-12-25 | 2009-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-25 | 2012-12-25 | 2013-06-26 | $7700.00 | Window Closed / Lapsed |