US5952708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Display device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-11-18
•
Granted: 1999-09-14
•
Expires: 2016-11-18
Abstract
Abstract A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:27
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136209; G02F1/136227; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/00; H10D86/40; H10D86/451; H10D86/60
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
95 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of silicon oxide or silicon nitride provided relative to said thin film transistor; a second layer insulation film made of polyimide resin or acrylic resin, provided for flattening a surface irregularity of said first layer insulation film, said second layer insulation film being relative to said first layer insulation film; and a masking film providing shading of said thin film transistor, provided relative to said second layer insulation film and said thin film transistor, said masking film being made of chromium.
Claim 2
Dependent Claim
95 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of silicon oxide or silicon nitride provided relative to said thin film transistor; a second layer insulation film made of polyimide resin or acrylic resin, provided for flattening a surface irregularity of said first layer insulation film, said second layer insulation film being relative to said first layer insulation film; and a masking film providing shading of said thin film transistor, provided relative to said second layer insulation film and said thin film transistor, said masking film being made of chromium.
Claim 3
Dependent Claim
58 words
The device of claim 1 wherein said thin film transistor comprises: a source region and a drain region provided on an insulating surface; a channel region provided on said insulating surface between said source region and said drain region; a gate insulating film provided on said channel region; and a gate electrode provided on said gate insulating film.
Claim 4
Dependent Claim
50 words
The device of claim 1 wherein said thin film transistor comprises: a gate electrode provided on an insulating surface; a gate insulating film provided on said gate electrode; a channel region provided on said gate insulating film; and a source region and a drain region sandwiching said channel region therebetween.
Claim 5
Dependent Claim
72 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided over said wiring for flattening a surface irregularity of said first layer insulation film and said wiring; and a masking film provided relative to said transparent organic film and said thin film transistor.
Claim 6
Dependent Claim
72 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided over said wiring for flattening a surface irregularity of said first layer insulation film and said wiring; and a masking film provided relative to said transparent organic film and said thin film transistor.
Claim 7
Dependent Claim
18 words
The device of claim 4 wherein a metal material is used as the material of said masking film.
Claim 8
Dependent Claim
58 words
The device of claim 4 wherein said thin film transistor comprises: a source region and a drain region provided on an insulating surface; a channel region provided on said insulating surface between said source region and said drain region; a gate insulating film provided on said channel region; and a gate electrode provided on said gate insulating film.
Claim 9
Dependent Claim
50 words
The device of claim 4 wherein said thin film transistor comprises: a gate electrode provided on an insulating surface; a gate insulating film provided on said gate electrode; a channel region provided on said gate insulating film; and a source region and a drain region sandwiching said channel region therebetween.
Claim 10
Dependent Claim
13 words
The device of claim 4 wherein said masking film is made of chromium.
Claim 11
Dependent Claim
18 words
The device of claim 4 wherein said transparent organic film is made of polyimide resin or acrylic resin.
Claim 12
Dependent Claim
99 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising aluminum provided relative to said transparent organic film and said thin film transistor; and an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color.
Claim 13
Dependent Claim
99 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising aluminum provided relative to said transparent organic film and said thin film transistor; and an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color.
Claim 14
Dependent Claim
99 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising tantalum provided relative to said transparent organic film and said thin film transistor; and an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color.
Claim 15
Dependent Claim
99 words
An electro-optical device comprising: a thin film transistor; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising tantalum provided relative to said transparent organic film and said thin film transistor; and an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color.
Claim 16
Dependent Claim
181 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulating film between said gate electrode and said channel region; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film provided relative to said second layer insulation film and said thin film transistor; a third layer insulation film made of a transparent organic material provided relative to said masking film; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
Claim 17
Dependent Claim
181 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulating film between said gate electrode and said channel region; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film provided relative to said second layer insulation film and said thin film transistor; a third layer insulation film made of a transparent organic material provided relative to said masking film; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
Claim 18
Dependent Claim
13 words
The device of claim 12 wherein said masking film is made of chromium.
Claim 19
Dependent Claim
19 words
The device of claim 12 wherein said second layer insulation film is made of polyimide resin or acrylic resin.
Claim 20
Dependent Claim
19 words
The device of claim 12 wherein said third layer insulation film is made of polyimide resin or acrylic resin.
Claim 21
Dependent Claim
211 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulation film between said channel region and said gate electrode; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising aluminum provided relative to said second layer insulation film and said thin film transistor; an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color; a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
Claim 22
Dependent Claim
211 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulation film between said channel region and said gate electrode; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film; a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising aluminum provided relative to said second layer insulation film and said thin film transistor; an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color; a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
Claim 23
Dependent Claim
204 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said draining region, a gate electrode provided adjacent to said channel region with a gate insulation film therebetween; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film;. a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising tantalum provided relative to said second layer insulation film and said thin film transistor; an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color; a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
Claim 24
Dependent Claim
204 words
An electro-optical device comprising: a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said draining region, a gate electrode provided adjacent to said channel region with a gate insulation film therebetween; a first layer insulation film made of inorganic material provided relative to said thin film transistor; a wiring provided relative to said first layer insulation film;. a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring; a masking film comprising tantalum provided relative to said second layer insulation film and said thin film transistor; an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color; a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-13 | 2003-03-15 | 2003-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-13 | 2007-03-15 | 2007-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-13 | 2011-03-15 | 2011-09-14 | $7700.00 | Window Closed / Lapsed |