US6169293B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Display device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-07-22
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Granted: 2001-01-02
•
Expires: 2019-07-22
Abstract
Abstract A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:31
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136209; G02F1/136227; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/00; H10D86/40; H10D86/451; H10D86/60
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
117 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; a gate electrode formed over said channel region with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said switching element; and an organic resin film formed on said first insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 2
Dependent Claim
117 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; a gate electrode formed over said channel region with said gate insulating film interposed therebetween; a first insulating film comprising silicon nitride formed over said switching element; and an organic resin film formed on said first insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 3
Dependent Claim
17 words
The device according to claim 1 , wherein said semiconductor device is a liquid crystal display device.
Claim 4
Dependent Claim
16 words
The device according to claim 1 , wherein said semiconductor device is an EL display device.
Claim 5
Dependent Claim
25 words
The device according to claim 1 , wherein said organic resin film comprises a material selected from the group consisting of polyimide and acrylic resins.
Claim 6
Dependent Claim
129 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; a gate electrode formed over said channel region with said gate insulating film interposed therebetween; a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon nitride formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 7
Dependent Claim
129 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; a gate electrode formed over said channel region with said gate insulating film interposed therebetween; a first insulating film comprising silicon oxide formed over said switching element; a second insulating film comprising silicon nitride formed on said first insulating film; an organic resin film formed on said second insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 8
Dependent Claim
17 words
The device according to claim 5 , wherein said semiconductor device is a liquid crystal display device.
Claim 9
Dependent Claim
16 words
The device according to claim 5 , wherein said semiconductor device is an EL display device.
Claim 10
Dependent Claim
25 words
The device according to claim 5 , wherein said organic resin film comprises a material selected from the group consisting of polyimide and acrylic resins.
Claim 11
Dependent Claim
115 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween; an insulating film comprising silicon oxynitride formed over said switching element; an organic resin film formed on said insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 12
Dependent Claim
115 words
A semiconductor device comprising: a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween; an insulating film comprising silicon oxynitride formed over said switching element; an organic resin film formed on said insulating film; and a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.
Claim 13
Dependent Claim
17 words
The device according to claim 9 , wherein said semiconductor device is a liquid crystal display device.
Claim 14
Dependent Claim
16 words
The device according to claim 9 , wherein said semiconductor device is an EL display device.
Claim 15
Dependent Claim
25 words
The device according to claim 9 , wherein said organic resin film comprises a material selected from the group consisting of polyimide and acrylic resins.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-02 | 2004-07-03 | 2005-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-02 | 2008-07-03 | 2009-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-02 | 2012-07-03 | 2013-01-02 | $7700.00 | Window Closed / Lapsed |