US5849043A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for laser ion doping
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-03-28
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Granted: 1998-12-15
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Expires: 2015-03-28
Abstract
Abstract A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
Inventors
- 👤 Hongyong Zhang
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; B; B60; B60R; B60R25/00; B60R25/01; B60R25/04; B60R25/06; B60R25/066; H10D30/0321; H10F; H10F39/00; H10F39/011; H10F39/016; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
73 words
An apparatus for doping a semiconductor comprising silicon with an impurity for providing either N-conductivity or P-conductivity to the semiconductor comprising: means for irradiating a linear laser beam to a surface of the semiconductor in a gas atmosphere containing the impurity while scanning the linear laser beam; and means for applying an electromagnetic energy to the gas atmosphere so as to decompose the gas containing the impurity while irradiating the linear laser beam.
Claim 2
Independent Claim
73 words
An apparatus for doping a semiconductor comprising silicon with an impurity for providing either N-conductivity or P-conductivity to the semiconductor comprising: means for irradiating a linear laser beam to a surface of the semiconductor in a gas atmosphere containing the impurity while scanning the linear laser beam; and means for applying an electromagnetic energy to the gas atmosphere so as to decompose the gas containing the impurity while irradiating the linear laser beam.
Claim 3
Dependent Claim
35 words
The apparatus of claim 1 wherein the gas atmosphere comprises a gas selected from the group consisting of Ash 3 , PH 3 , BF 3 , BCl 3 and B(CH) 3 ) 3 .
Claim 4
Dependent Claim
29 words
The apparatus of claim 1 further comprising means for heating the semiconductor at a temperature not higher than a crystallization temperature of said semiconductor while applying the electromagnetic energy.
Claim 5
Independent Claim
87 words
An apparatus for forming a semiconductor device comprising: a chamber in which a semiconductor film comprising silicon formed on a substrate is provided; means for transferring the substrate in a direction; means for introducing a gas containing a dopant species into the chamber; means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the semiconductor film; and means for heating the semiconductor film during a laser light irradiation.
Claim 6
Independent Claim
87 words
An apparatus for forming a semiconductor device comprising: a chamber in which a semiconductor film comprising silicon formed on a substrate is provided; means for transferring the substrate in a direction; means for introducing a gas containing a dopant species into the chamber; means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the semiconductor film; and means for heating the semiconductor film during a laser light irradiation.
Claim 7
Dependent Claim
16 words
The apparatus of claim 4 wherein the semiconductor film is heated not lower than 200° C.
Claim 8
Independent Claim
95 words
An apparatus for forming a semiconductor device comprising: a chamber in which a semiconductor film comprising silicon formed on a substrate is provided; means for transferring the substrate in a direction; means for introducing a gas containing a dopant species into the chamber; means for applying an electromagnetic energy to the gas in order to activate the gas; and means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the irradiated portion of the semiconductor film.
Claim 9
Independent Claim
95 words
An apparatus for forming a semiconductor device comprising: a chamber in which a semiconductor film comprising silicon formed on a substrate is provided; means for transferring the substrate in a direction; means for introducing a gas containing a dopant species into the chamber; means for applying an electromagnetic energy to the gas in order to activate the gas; and means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the irradiated portion of the semiconductor film.
Claim 10
Dependent Claim
18 words
The apparatus of claim 3 further comprising means for heating the semiconductor film during a laser light irradiation.
Claim 11
Dependent Claim
79 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; and accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate, said accelerating means having a variable position relative to said substrate.
Claim 12
Dependent Claim
79 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; and accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate, said accelerating means having a variable position relative to said substrate.
Claim 13
Dependent Claim
87 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; doping means for introducing said dopant species from said plasma selectively into a portion of said substrate, said portion extending longitudinally in one direction on a surface of said substrate; and means for producing relative motion between said substrate and said doping means in a direction orthogonal to said one direction.
Claim 14
Dependent Claim
87 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; doping means for introducing said dopant species from said plasma selectively into a portion of said substrate, said portion extending longitudinally in one direction on a surface of said substrate; and means for producing relative motion between said substrate and said doping means in a direction orthogonal to said one direction.
Claim 15
Dependent Claim
59 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; and means for introducing said dopant species from said plasma selectively and simultaneously into the entirety of a line-shaped portion of said substrate.
Claim 16
Dependent Claim
59 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; and means for introducing said dopant species from said plasma selectively and simultaneously into the entirety of a line-shaped portion of said substrate.
Claim 17
Dependent Claim
93 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate extending longitudinally in one direction; and means for producing relative motion between said substrate and said accelerating means in a direction orthogonal to said one direction.
Claim 18
Dependent Claim
93 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate extending longitudinally in one direction; and means for producing relative motion between said substrate and said accelerating means in a direction orthogonal to said one direction.
Claim 19
Dependent Claim
89 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; a substrate holder for holding a substrate in said chamber; means for producing a plasma of said gas by applying a field in a first direction parallel to a surface of said substrate; and accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from the plasma into a target portion of the substrate in a second direction perpendicular to said surface of said substrate.
Claim 20
Dependent Claim
89 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing dopant species into the chamber; a substrate holder for holding a substrate in said chamber; means for producing a plasma of said gas by applying a field in a first direction parallel to a surface of said substrate; and accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from the plasma into a target portion of the substrate in a second direction perpendicular to said surface of said substrate.
Claim 21
Dependent Claim
20 words
The apparatus of claim 12 further comprising movement means for varying the relative position of the accelerating means and substrate.
Claim 22
Independent Claim
15 words
The apparatus of any of claims 8-12 further comprising a heater for heating said substrate.
Claim 23
Independent Claim
16 words
The apparatus of any of claims 8-12 wherein said substrate has a semiconductor layer formed thereon.
Claim 24
Independent Claim
25 words
The apparatus of any of claims 8-12 wherein said gas is selected from the group consisting of PH 3 and B 2 H 6 .
Claim 25
Independent Claim
35 words
The apparatus of any of claims 8-12 wherein said gas is selected from the group consisting of AsH 3 , PH 3 , BF 3 , BCI 3 , and B(CH 3 ) 3 .
Claim 26
Independent Claim
26 words
The apparatus of any of claims 8-12 wherein said means for producing a plasma comprises one of high frequency energy, microwave energy, and electron cyclotron resistance.
Claim 27
Dependent Claim
85 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing PH 3 or B 2 H 6 dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; exhaust means including at least one of a turbomolecular pump and a cryo-pump for evacuating said chamber; accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma into a portion of said substrate.
Claim 28
Dependent Claim
85 words
An ion doping apparatus comprising: a chamber; means for introducing a gas containing PH 3 or B 2 H 6 dopant species into the chamber; means for producing a plasma of said gas; a substrate holder for holding a substrate in said chamber; exhaust means including at least one of a turbomolecular pump and a cryo-pump for evacuating said chamber; accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma into a portion of said substrate.
Claim 29
Dependent Claim
17 words
The apparatus of claim 19 wherein said exhaust means excludes carbon and oxygen impurities from said plasma.
Claim 30
Dependent Claim
18 words
The apparatus of claim 19 wherein said exhaust means generates a vacuum of at least 10 -6 torr.
Claim 31
Dependent Claim
39 words
The apparatus of claim 19 wherein said accelerating means further comprises means for accelerating introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate extending longitudinally in one direction.
Claim 32
Dependent Claim
27 words
The apparatus of claim 22 further comprising means for producing relative motion between said substrate and said accelerating means in a direction orthogonal to said one direction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-14 | 2002-06-15 | 2002-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-14 | 2006-06-15 | 2006-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-14 | 2010-06-15 | 2010-12-15 | $7700.00 | Window Closed / Lapsed |