Apparatus for semiconductor process including photo-excitation process

Claim 1

An apparatus for preventing window fouling and chamber wall fouling using gas spiral vortices in making semiconductors by a photo-excitation process or a plasma process which comprises: (a) a revolving gas chamber for forming spiral vortices flow of purge gas and a gas reaction chamber, said revolving gas chamber being located above or beside said gas reaction chamber; (b) said revolving gas chamber having a multiplicity of gas inlets located in a wall thereof and which are oriented at an angle with respect to the center thereof and all of said gas inlets being oriented to produce a gas low therein in the same direction, control said gas flow therein to form said spiral vortices therein and prevent reverse flow due to turbulent flow of reactant gases in said gas reaction chamber and without mixing with reactant gases in said revolving gas chamber and with complete isolation from a window in said revolving gas chamber and from said reactant gases, and avoiding window fouling and chamber wall fouling in said revolving gas chamber, the spiral vortices being formed away from said window or top surface of said revolving gas chamber, and without the need to be in contact with said window or top surface of said revolving gas chamber; (c) said spiral vortices flow in said revolving gas chamber being in a clockwise or counter-clockwise direction and perpendicular to the axis thereof; (d) a partition having a centrally located circular opening disposed between said revolving gas chamber and said gas reaction chamber; (e) a light source disposed internally or externally with respect to said revolving gas chamber and providing light to said gas reaction chamber through said revolving gas chamber; and (f) one or a multiplicity of reactant gas inlets in said wall of said gas reaction chamber, an exhaust outlet connected to a vacuum pump located in a wall of said gas reaction chamber, and a substrate holder for supporting a substrate to be treated disposed in said gas reaction chamber between the gas inlets and the exhaust outlet.

Claim 2

An apparatus for preventing window fouling and chamber wall fouling using gas spiral vortices in making semiconductors by a photo-excitation process or a plasma process which comprises: (a) a revolving gas chamber for forming spiral vortices flow of purge gas and a gas reaction chamber, said revolving gas chamber being located above or beside said gas reaction chamber; (b) said revolving gas chamber having a multiplicity of gas inlets located in a wall thereof and which are oriented at an angle with respect to the center thereof and all of said gas inlets being oriented to produce a gas low therein in the same direction, control said gas flow therein to form said spiral vortices therein and prevent reverse flow due to turbulent flow of reactant gases in said gas reaction chamber and without mixing with reactant gases in said revolving gas chamber and with complete isolation from a window in said revolving gas chamber and from said reactant gases, and avoiding window fouling and chamber wall fouling in said revolving gas chamber, the spiral vortices being formed away from said window or top surface of said revolving gas chamber, and without the need to be in contact with said window or top surface of said revolving gas chamber; (c) said spiral vortices flow in said revolving gas chamber being in a clockwise or counter-clockwise direction and perpendicular to the axis thereof; (d) a partition having a centrally located circular opening disposed between said revolving gas chamber and said gas reaction chamber; (e) a light source disposed internally or externally with respect to said revolving gas chamber and providing light to said gas reaction chamber through said revolving gas chamber; and (f) one or a multiplicity of reactant gas inlets in said wall of said gas reaction chamber, an exhaust outlet connected to a vacuum pump located in a wall of said gas reaction chamber, and a substrate holder for supporting a substrate to be treated disposed in said gas reaction chamber between the gas inlets and the exhaust outlet.

Claim 5

An apparatus for preventing window fouling and chamber wall fouling using gas spiral vortices in making semiconductors by a photo-excitation process or a plasma process, which comprises: (a) a revolving gas chamber for forming spiral vortices flow of purge gas and a gas reaction chamber, said revolving gas chamber being located above or beside said gas reaction chamber without a partition therebetween and said revolving gas chamber being smaller than said gas reaction chamber; (b) said revolving gas chamber having a multiplicity of gas inlets located in a wall thereof and which are oriented at an angle with respect to the center thereof and all of said gas inlets being oriented to produce a gas flow therein in the same direction, control said gas flow therein, form said spiral vortices therein and prevent a reverse flow therein due to turbulent flow of reactant gases in said gas reaction chamber and without mixing with said reactant gases in said revolving gas chamber and with complete isolation from a light window in said revolving gas chamber and from said reactant gases, and avoiding window fouling and chamber wall fouling in said revolving gas chamber; said spiral vortices being formed away from said window or top surface of said revolving gas chamber, and without the need to be in contact with said window or top surface of said revolving gas chamber; (c) said spiral vortices flow in said revolving gas chamber being in a clockwise or counter-clockwise direction and perpendicular to the axis thereof; (d) a light source disposed internally or externally with respect to said revolving gas chamber and providing light to said gas reaction chamber through said revolving gas chamber; and (e) one or a multiplicity of reactant gas inlets in a wall of said gas reaction chamber, an exhaust outlet connected to a vacuum pump located in a wall of said gas reaction chamber, and a substrate holder for supporting a substrate to be treated disposed in said gas reaction chamber between the gas inlets and the exhaust outlet.

Claim 6

An apparatus for preventing window fouling and chamber wall fouling using gas spiral vortices in making semiconductors by a photo-excitation process or a plasma process, which comprises: (a) a revolving gas chamber for forming spiral vortices flow of purge gas and a gas reaction chamber, said revolving gas chamber being located above or beside said gas reaction chamber without a partition therebetween and said revolving gas chamber being smaller than said gas reaction chamber; (b) said revolving gas chamber having a multiplicity of gas inlets located in a wall thereof and which are oriented at an angle with respect to the center thereof and all of said gas inlets being oriented to produce a gas flow therein in the same direction, control said gas flow therein, form said spiral vortices therein and prevent a reverse flow therein due to turbulent flow of reactant gases in said gas reaction chamber and without mixing with said reactant gases in said revolving gas chamber and with complete isolation from a light window in said revolving gas chamber and from said reactant gases, and avoiding window fouling and chamber wall fouling in said revolving gas chamber; said spiral vortices being formed away from said window or top surface of said revolving gas chamber, and without the need to be in contact with said window or top surface of said revolving gas chamber; (c) said spiral vortices flow in said revolving gas chamber being in a clockwise or counter-clockwise direction and perpendicular to the axis thereof; (d) a light source disposed internally or externally with respect to said revolving gas chamber and providing light to said gas reaction chamber through said revolving gas chamber; and (e) one or a multiplicity of reactant gas inlets in a wall of said gas reaction chamber, an exhaust outlet connected to a vacuum pump located in a wall of said gas reaction chamber, and a substrate holder for supporting a substrate to be treated disposed in said gas reaction chamber between the gas inlets and the exhaust outlet.