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US4435445A Expired / Lapsed US ⏱️ 0.0 years remaining

Photo-assisted CVD

Assignee: Atlantic Richfield Co
•
Filing: 1982-05-13
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Granted: 1984-03-06
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Expires: 2002-05-13
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Abstract

Abstract A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.

Inventors

  • 👤 David D. Allred
  • 👤 Lee Walter
  • 👤 Jaime M. Reyes
  • 👤 Stanford R. Ovshinsky

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 06:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/488; C23C16/04; C23C16/047; C23C16/482

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 77 words
A process for making an amorphous silicon and germanium alloy film comprising: providing a gas comprising silane and germane in a deposition environment containing the substrate; heating the substrate below the temperature required for pyrolysis of the silane and germane; irradiating the silane and germane with radiation below an energy level required to photochemically decompose the gas; and the combination of heat and radiation causing deposition of an amorphous silicon and germanium alloy film on the substrate.
Claim 2
Dependent Claim 77 words
A process for making an amorphous silicon and germanium alloy film comprising: providing a gas comprising silane and germane in a deposition environment containing the substrate; heating the substrate below the temperature required for pyrolysis of the silane and germane; irradiating the silane and germane with radiation below an energy level required to photochemically decompose the gas; and the combination of heat and radiation causing deposition of an amorphous silicon and germanium alloy film on the substrate.
Claim 3
Dependent Claim 19 words
The process of claim 1 wherein the substrate is heated to a temperature of at least about 250° C.
Claim 4
Dependent Claim 11 words
The process of claim 1 wherein the radiation is ultraviolet light.
Claim 5
Dependent Claim 17 words
The process of claim 3 wherein the ultraviolet light has a wavelength of greater than 2,000 Å.
Claim 6
Dependent Claim 45 words
The process of claim 1 wherein the radiation is passed through a transparent member exposed at a first surface thereof to the deposition environment, and the process further comprises establishing a flow of substantially inert gaseous material along the first surface to minimize deposition thereon.
Claim 7
Dependent Claim 22 words
The process of claim 5 wherein the step of establishing the flow comprises producing a laminar gas curtain along the first surface.
Claim 8
Dependent Claim 18 words
The process of claim 1 wherein the gas in the deposition environment consists essentially of silane and germane.

References Cited (Backward Citations)

US3200018A Cited
US3271180A Cited
US3490961A Cited
US3661637A Cited
US4100418A Cited
US4340617A Cited
US4348428A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-03-06 1987-09-05 1988-03-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-03-06 1991-09-05 1992-03-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-03-06 1995-09-05 1996-03-06 $7700.00 Window Closed / Lapsed

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