US5296405A
Expired / Lapsed
US
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Method for photo annealing non-single crystalline semiconductor films
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-08-24
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Granted: 1994-03-22
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Expires: 2012-08-24
Abstract
Abstract An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kunio Suzuki
- 👤 Susumu Nagayama
- 👤 Takashi Inujima
- 👤 Masayoshi Abe
- 👤 Takeshi Fukada
- 👤 Mikio Kinka
- 👤 Ippei Kobayashi
- 👤 Katsuhiko Shibata
- 👤 Masato Susukida
- 👤 Kaoru Koyanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:27
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; H10F; H10F71/00; H10F71/10; H10F71/128; H10F71/131; H10F71/134; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/004; Y10S148/061; Y10S148/09; Y10S148/093
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
65 words
A method of preparing non-single crystalline semiconductor films comprising the steps of: forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5×10 18 cm -3 therein on a substrate by a CVD method; radiating said semiconductor film with light; introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Claim 2
Independent Claim
65 words
A method of preparing non-single crystalline semiconductor films comprising the steps of: forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5×10 18 cm -3 therein on a substrate by a CVD method; radiating said semiconductor film with light; introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein said radiating film is deposited by a plasma CVD method.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein said semiconductor film is deposited by a photo CVD method.
Claim 5
Independent Claim
52 words
A method of preparing non-single crystalline semiconductor film comprising the step of: forming an amorphous semiconductor silicon semiconductor film on a substrate by a CVD method; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and thermally annealing said semiconductor film at 100°-500° C.
Claim 6
Independent Claim
52 words
A method of preparing non-single crystalline semiconductor film comprising the step of: forming an amorphous semiconductor silicon semiconductor film on a substrate by a CVD method; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and thermally annealing said semiconductor film at 100°-500° C.
Claim 7
Dependent Claim
17 words
The method of claim 4 wherein said thermally annealing step is performed in an atmosphere containing fluorine.
Claim 8
Dependent Claim
16 words
The method of claim 4, wherein said semiconductor film is deposited by a plasma CVD method.
Claim 9
Dependent Claim
16 words
The method of claim 4, wherein said semiconductor film is deposited by a photo CVD method.
Claim 10
Independent Claim
73 words
A method of preparing non-single crystalline semiconductor film comprising the step of: forming an intrinsic amorphous semiconductor film on a substrate having an insulating surface by a CVD method at a temperature less than 500° C.; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Claim 11
Independent Claim
73 words
A method of preparing non-single crystalline semiconductor film comprising the step of: forming an intrinsic amorphous semiconductor film on a substrate having an insulating surface by a CVD method at a temperature less than 500° C.; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Claim 12
Dependent Claim
16 words
The method of claim 8, wherein said semiconductor film is deposited by a plasma CVD method.
Claim 13
Dependent Claim
16 words
The method of claim 9, wherein said semiconductor film is deposited by a photo CVD method.
Claim 14
Independent Claim
77 words
The method of preparing non-single crystalline semiconductor film comprising the step of: forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5×10 18 cm -3 therein on a substrate by a CVD method; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Claim 15
Independent Claim
77 words
The method of preparing non-single crystalline semiconductor film comprising the step of: forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5×10 18 cm -3 therein on a substrate by a CVD method; radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure; and introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
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