US4582720A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for forming non-single-crystal layer
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1983-09-20
•
Granted: 1986-04-15
•
Expires: 2003-09-20
Abstract
Abstract A substrate introducing chamber, a reaction chamber and a substrate removing chamber are sequentially arranged with a shutter between adjacent ones of them. One or more substrates are mounted on a holder with their surfaces lying in vertical planes and carried into the substrate introducing chamber, the reaction chamber and the substrate removing chamber one after another. In the reaction chamber, a material gas is guided by gas guides to flow along the substrate surfaces in a limited space in which the substrates are disposed. The material gas is ionized into a plasma through the use of high-frequency energy obtained across a pair electrodes. The line of electric force of the high-frequency energy is directed along the substrate surfaces. By ionization of the material gas into the plasma, a non-single-crystal layer is formed, by deposition, on each substrate. At this time, the substrates are floating off the high-frequency energy source.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/18; H01J37/185; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/511; C23C16/54; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
200 words
A non-single-crystal layer forming method in which a material gas for forming a non-single-crystal layer is introduced into a reaction chamber and is ionized into a plasma by high-frequency electric energy to deposit the non-single-crystal layer on one or more substrates placed in the reaction chamber; wherein the substrates are disposed with their surfaces lying in vertical planes or planes close thereto; wherein the material gas is guided by first and second gas guide means provided upstream and downstream of a gas passage, respectively, so that the material gas stream passes along the substrate surfaces; wherein the high-frequency electric energy for ionization into the plasma of the material gas has its line of electric force extending along the substrate surfaces and is obtained across first and second electrodes disposed in the first and second gas guide means, respectively said electrodes permitting the passage therethrough of the material gas; and wherein the one or more substrates are disposed between the first and second electrodes and are not supplied with the potential of either of the first and second electrodes; such that the material gas is ionized into a plasma and a non-single-crystal layer is formed on the one or more substrates.
Claim 2
Dependent Claim
200 words
A non-single-crystal layer forming method in which a material gas for forming a non-single-crystal layer is introduced into a reaction chamber and is ionized into a plasma by high-frequency electric energy to deposit the non-single-crystal layer on one or more substrates placed in the reaction chamber; wherein the substrates are disposed with their surfaces lying in vertical planes or planes close thereto; wherein the material gas is guided by first and second gas guide means provided upstream and downstream of a gas passage, respectively, so that the material gas stream passes along the substrate surfaces; wherein the high-frequency electric energy for ionization into the plasma of the material gas has its line of electric force extending along the substrate surfaces and is obtained across first and second electrodes disposed in the first and second gas guide means, respectively said electrodes permitting the passage therethrough of the material gas; and wherein the one or more substrates are disposed between the first and second electrodes and are not supplied with the potential of either of the first and second electrodes; such that the material gas is ionized into a plasma and a non-single-crystal layer is formed on the one or more substrates.
Claim 3
Dependent Claim
45 words
A non-single-crystal layer forming method according to claim 1, wherein a plurality of substrates are disposed at predetermined intervals, and wherein the material gas stream passing along the surface of each of the substrates is prevented by both outermost ones of them from spreading laterally.
Claim 4
Dependent Claim
49 words
A non-single-crystal layer forming method according to claim 2, wherein the substrates are held by a holder having first and second plates extending along the vertical planes with the substrates disposed therebetween, and wherein the material gas stream is prevented by the first and second plates from spreading laterally.
Claim 5
Dependent Claim
28 words
A non-single-crystal layer forming method according to claim 1, wherein the material gas is ionized into the plasma by ultrahigh-frequency electric energy in addition to the high-frequency energy.
Claim 6
Dependent Claim
24 words
A non-single-crystal layer forming method according to claim 1, wherein the material gas is ionized by photo energy in addition to the high-frequency energy.
Claim 7
Dependent Claim
150 words
A non-single-crystal layer forming apparatus which is provided with a reaction chamber for forming a non-single-crystal layer on one or more substrates disposed therein, means for introducing a material gas into the reaction chamber, means for exhausting gas from the reaction chamber and means for ionizing the material gas introduced into the reaction chamber, the improvement comprising; first and second gas guide means provided in the reaction chamber upstream and downstream of a gas passage, respectively, for guiding the material gas to pass it along the substrate surfaces; wherein the material gas ionizing means is provided with first and second electrodes for obtaining high-frequency electric energy; and wherein the first and second electrodes permit the passage therethrough of the material gas, and are disposed in the first and second gas guide means, respectively, so that the lines of electric force of the high-frequency electric energy extend along the substrate surfaces.
Claim 8
Dependent Claim
150 words
A non-single-crystal layer forming apparatus which is provided with a reaction chamber for forming a non-single-crystal layer on one or more substrates disposed therein, means for introducing a material gas into the reaction chamber, means for exhausting gas from the reaction chamber and means for ionizing the material gas introduced into the reaction chamber, the improvement comprising; first and second gas guide means provided in the reaction chamber upstream and downstream of a gas passage, respectively, for guiding the material gas to pass it along the substrate surfaces; wherein the material gas ionizing means is provided with first and second electrodes for obtaining high-frequency electric energy; and wherein the first and second electrodes permit the passage therethrough of the material gas, and are disposed in the first and second gas guide means, respectively, so that the lines of electric force of the high-frequency electric energy extend along the substrate surfaces.
Claim 9
Dependent Claim
35 words
Non-single-crystal layer forming apparatus according to claim 6, wherein the material gas ionizing means is provided with means for supplying ultrahigh-frequency electric energy into the reaction chamber in addition to the first and second electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |