US5899547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electro-optical device and driving method for the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-11-04
•
Granted: 1999-05-04
•
Expires: 2017-11-04
Abstract
Abstract nnnn A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Masaaki Hiroki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:35
CPC Classifications
G; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G02F1/13624; G09G3/3659; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D62/00; H10D62/40; H10D86/00; H10D86/40; G02F1/136245; G02F2203/00; G02F2203/30; G09G2300/00; G09G2300/04; G09G2300/0421; G09G2300/0426; G09G2300/08; G09G2300/0809; G09G2300/0823; G09G2330/00; G09G2330/08; G09G3/2007; G09G3/2011
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
159 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate: at least one thin film transistor formed on said insulating surface, said thin film transistor comprising source, drain and channel regions; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; an organic resin film provided over said thin film transistor and said interlayer insulating film; and a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film for switching said liquid crystal material, wherein said interlayer insulating film is located between said organic resin film and said channel region of the thin film transistor, and wherein said thin film transistor comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 2
Dependent Claim
159 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate: at least one thin film transistor formed on said insulating surface, said thin film transistor comprising source, drain and channel regions; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; an organic resin film provided over said thin film transistor and said interlayer insulating film; and a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film for switching said liquid crystal material, wherein said interlayer insulating film is located between said organic resin film and said channel region of the thin film transistor, and wherein said thin film transistor comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 3
Dependent Claim
16 words
An electro-optical device according to claim 1 wherein said pixel electrode is a transparent conductive film.
Claim 4
Dependent Claim
22 words
An electro-optical device according to claim 1 wherein said pixel electrode is connected to said thin film transistor via said conductive film.
Claim 5
Dependent Claim
14 words
An electro-optical device according to claim 1 wherein said inorganic material comprises silicon oxide.
Claim 6
Dependent Claim
26 words
An electro-optical device according to claim 1 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 7
Dependent Claim
19 words
An electro-optical device according to claim 1 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 8
Dependent Claim
18 words
An electro-optical device according to claim 1 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 9
Dependent Claim
16 words
An electro-optical device according to claim 1 consisting of 640×480 pixels arranged in a matrix form.
Claim 10
Dependent Claim
16 words
An electro-optical device according to claim 1 consisting of 1260×960 pixels arranged in a matrix form.
Claim 11
Dependent Claim
35 words
An electro-optical device according to claim 1 further comprising a conductive film formed on said interlayer film and electrically connected to said thin film transistor through a contact hole formed in said interlayer insulating film.
Claim 12
Dependent Claim
156 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate: at least one thin film transistor formed on said insulating surface, said thin film transistor comprising source, drain and channel regions; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; an organic resin film provided over said thin film transistor and said interlayer insulating film; and a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film for switching said liquid crystal material, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said thin film transistor comprises silicon and exhibits a peak of Raman spectra, displaced from 522 cm -1 .
Claim 13
Dependent Claim
156 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate: at least one thin film transistor formed on said insulating surface, said thin film transistor comprising source, drain and channel regions; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; an organic resin film provided over said thin film transistor and said interlayer insulating film; and a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film for switching said liquid crystal material, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said thin film transistor comprises silicon and exhibits a peak of Raman spectra, displaced from 522 cm -1 .
Claim 14
Dependent Claim
16 words
An electro-optical device according to claim 11 wherein said pixel electrode is a transparent conductive film.
Claim 15
Dependent Claim
22 words
An electro-optical device according to claim 11 wherein said pixel electrode is connected to said thin film transistor via said conductive film.
Claim 16
Dependent Claim
16 words
An electro-optical device according to claim 11 consisting of 1260×960 pixels arranged in a matrix form.
Claim 17
Dependent Claim
26 words
An electro-optical device according to claim 11 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 18
Dependent Claim
19 words
An electro-optical device according to claim 11 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 19
Dependent Claim
18 words
An electro-optical device according to claim 11 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 20
Dependent Claim
16 words
An electro-optical device according to claim 11 consisting of 640×480 pixels arranged in a matrix form.
Claim 21
Dependent Claim
14 words
An electro-optical device according to claim 11 wherein said inorganic material comprises silicon oxide.
Claim 22
Dependent Claim
35 words
An electro-optical device according to claim 11 further comprising a conductive film formed on said interlayer film and electrically connected to said thin film transistor through a contact hole formed in said interlayer insulating film.
Claim 23
Dependent Claim
152 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate; at least one thin film transistor formed on said insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and an organic resin film provided over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said semiconductor layer comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 24
Dependent Claim
152 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate; at least one thin film transistor formed on said insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and an organic resin film provided over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said semiconductor layer comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 25
Dependent Claim
34 words
An electro-optical device according to claim 21 further comprising a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film.
Claim 26
Dependent Claim
16 words
An electro-optical device according to claim 22 wherein said pixel electrode is a transparent conductive film.
Claim 27
Dependent Claim
14 words
An electro-optical device according to claim 21 wherein said inorganic material comprises silicon oxide.
Claim 28
Dependent Claim
26 words
An electro-optical device according to claim 21 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 29
Dependent Claim
19 words
An electro-optical device according to claim 21 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 30
Dependent Claim
18 words
An electro-optical device according to claim 21 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 31
Dependent Claim
16 words
An electro-optical device according to claim 21 consisting of 640×480 pixels arranged in a matrix form.
Claim 32
Dependent Claim
16 words
An electro-optical device according to claim 21 consisting of 1260×960 pixels arranged in a matrix form.
Claim 33
Dependent Claim
23 words
An electro-optical device according to claim 21 wherein said crystalline semiconductor layer has an electron mobility from 15 to 300 cm 2 /Vsec.
Claim 34
Dependent Claim
23 words
An electro-optical device according to claim 21 wherein said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec.
Claim 35
Dependent Claim
138 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate; at least one thin film transistor formed on said insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and an organic resin film provided over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra, displaced from 522 cm -1 .
Claim 36
Dependent Claim
138 words
An electro-optical liquid crystal device comprising: a first substrate having an insulating surface; a second substrate opposing said first substrate; a liquid crystal material between said first and second substrate; at least one thin film transistor formed on said insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and an organic resin film provided over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra, displaced from 522 cm -1 .
Claim 37
Dependent Claim
34 words
An electro-optical device according to claim 32 further comprising a pixel electrode formed over said organic resin film and connected to said thin film transistor through an opening provided in said organic resin film.
Claim 38
Dependent Claim
16 words
An electro-optical device according to claim 32 wherein said pixel electrode is a transparent conductive film.
Claim 39
Dependent Claim
22 words
An electro-optical device according to claim 32 wherein said pixel electrode is connected to said thin film transistor via said conductive film.
Claim 40
Dependent Claim
14 words
An electro-optical device according to claim 32 wherein said inorganic material comprises silicon oxide.
Claim 41
Dependent Claim
26 words
An electro-optical device according to claim 32 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 42
Dependent Claim
19 words
An electro-optical device according to claim 32 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 43
Dependent Claim
18 words
An electro-optical device according to claim 32 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 44
Dependent Claim
16 words
An electro-optical device according to claim 32 consisting of 640×480 pixels arranged in a matrix form.
Claim 45
Dependent Claim
16 words
An electro-optical device according to claim 32 consisting of 1260×960 pixels arranged in a matrix form.
Claim 46
Dependent Claim
23 words
An electro-optical device according to claim 32 wherein said crystalline semiconductor layer has an electron mobility from 15 to 300 cm 2 /Vsec.
Claim 47
Dependent Claim
23 words
An electro-optical device according to claim 32 wherein said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec.
References Cited (Backward Citations)
JPS4977537A
Cited
US4103297A
Cited
JPS5532026A
Cited
US4239346A
Cited
JPH02210330A
Cited
JPS5827365A
Cited
US4680580A
Cited
US4818077A
Cited
JPS61136263A
Cited
JPS61141174A
Cited
JPS62126677A
Cited
JPS6310777A
Cited
US5012228A
Cited
US4938565A
Cited
US5055899A
Cited
US5003356A
Cited
US5327001A
Cited
JPH01130131A
Cited
JPH01156725A
Cited
US4949141A
Cited
US5250931A
Cited
US5084905A
Cited
JPH02188723A
Cited
US5051570A
Cited
JPH02234134A
Cited
US5056895A
Cited
US5235195A
Cited
US5495353A
Cited
US5612799A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-03 | 2002-11-02 | 2003-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-03 | 2006-11-02 | 2007-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-03 | 2010-11-02 | 2011-05-04 | $7700.00 | Window Closed / Lapsed |