US5371398A
Expired / Lapsed
US
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Thin film transistor
Assignee: Fujifilm Business Innovation Corp
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Filing: 1993-01-28
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Granted: 1994-12-06
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Expires: 2013-01-28
Abstract
Abstract A thin film transistor comprising a gate electrode of electrically conductive material, a semiconducting material, a gate insulating material located between the gate electrode and the semiconducting material, a source electrode of electrically conductive material adjacent to the semiconducting material, a drain electrode of electrically conductive material adjacent to the semiconducting material, and a light intercepting material for preventing the incidence of light on the semiconducting material wherein the light interrupting material layer is formed of the same electrically conductive material as the source electrode and the drain electrode.
Inventors
- 👤 Yoshio Nishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:30
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136209; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D64/00; H10D64/118; H10D86/60; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
149 words
A thin film transistor comprising: a gate electrode of electrically conductive material and having a width; a semiconducting material; a gate insulating material between said gate electrode and said semiconducting material; a source electrode layer; a drain electrode layer; a light intercepting layer having a width at least equal to the width of said gate electrode for preventing the incidence of light on a channel region of said semiconducting material substantially coextensive with the width of said gate electrode, wherein said light intercepting layer, said source electrode layer, and said drain electrode layer comprise layer portions of a single layer of electrically conductive material; and an electrode insulating layer adjacent to said source electrode layer, said drain electrode layer and said light intercepting layer, said electrode insulating layer including apertures for allowing said source electrode layer and said drain electrode layer to make electrical contact with said semiconductor material.
Claim 2
Dependent Claim
149 words
A thin film transistor comprising: a gate electrode of electrically conductive material and having a width; a semiconducting material; a gate insulating material between said gate electrode and said semiconducting material; a source electrode layer; a drain electrode layer; a light intercepting layer having a width at least equal to the width of said gate electrode for preventing the incidence of light on a channel region of said semiconducting material substantially coextensive with the width of said gate electrode, wherein said light intercepting layer, said source electrode layer, and said drain electrode layer comprise layer portions of a single layer of electrically conductive material; and an electrode insulating layer adjacent to said source electrode layer, said drain electrode layer and said light intercepting layer, said electrode insulating layer including apertures for allowing said source electrode layer and said drain electrode layer to make electrical contact with said semiconductor material.
Claim 3
Dependent Claim
31 words
The thin film transistor as defined by claim 1, wherein said semiconductor material comprises a first layer and a second layer, said second layer comprising amorphous silicon mixed with trivalent atoms.
Claim 4
Dependent Claim
23 words
The thin film transistor as defined by claim 2, wherein said first layer of semiconducting material has an approximate thickness of 1000 angstroms.
Claim 5
Dependent Claim
23 words
The thin film transistor as defined by claim 2, wherein said second layer of amorphous silicon has an approximate thickness of 1000 angstroms.
Claim 6
Dependent Claim
19 words
The thin film transistor as defined by claim 1, further comprising a protecting film adjacent to said semiconducting material.
Claim 7
Dependent Claim
26 words
The thin film transistor as defined by claim 1, wherein said light intercepting layer is held at a ground voltage potential for reducing static charge thereon.
Claim 8
Dependent Claim
20 words
The thin film transistor as defined by claim 1, further comprising a diffusion preventing layer adjacent to said semiconducting material.
Claim 9
Dependent Claim
26 words
The thin film transistor as defined by claim 7, wherein said diffusion preventing layer is made of chromium and has an approximate thickness of 1500 angstroms.
Claim 10
Dependent Claim
13 words
The thin film transistor as defined by claim 1, further comprising a photosensor.
Claim 11
Dependent Claim
23 words
The thin film transistor as defined by claim 9, wherein said photosensor comprises a chromium electrode, a photoconductive layer, and a transparent electrode.
Claim 12
Dependent Claim
35 words
The thin film transistor as defined by claim 1, wherein said drain electrode layer, said source electrode layer, and said light intercepting layer are made of aluminum and have an approximate thickness of 1 micrometer.
Claim 13
Dependent Claim
31 words
The thin film transistor as defined by claim 1, wherein said semiconductor material comprises a first layer and a second layer, said second layer comprising amorphous silicon mixed with quintvalent atoms.
Claim 14
Dependent Claim
23 words
The thin film transistor as defined by claim 12, wherein said first layer of semiconducting material has an approximate thickness of 1000 angstroms.
Claim 15
Dependent Claim
23 words
The thin film transistor as defined by claim 12, wherein said second layer of amorphous silicon has an approximate thickness of 1000 angstroms.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
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| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |