Thin film display device with thin amorphous channel

Claim 2

In a thin film display device having a liquid crystal panel and a picture element selective transistor formed on a substrate, said picture element selective transistor comprising: a gate region formed on the substrate; a first insulating layer formed on the gate region and the substrate; a channel region layer composed of an undoped amorphous silicon single layer and having a thickness less than 1000 Å, the channel region layer being formed on the first insulating layer; a second insulating layer formed on the channel region layer and the first insulating layer, the second insulating layer being partially removed for exposing spaced-apart top parts of the channel region layer; a semi-conductive layer selectively formed on the exposed top parts of the channel region layer to define source and drain regions; and electrodes formed on the semi-conductive layer.

Claim 3

In a thin film display device according to claim 1; further comprising a high-melting point material layer formed between the semi-conductive layer and the electrodes.

Claim 4

A thin film transistor for driving a picture element of an active matrix type display device, comprising: a substrate; a gate region disposed on the substrate; an insulating layer disposed on the gate region; a channel region layer disposed on the insulating layer and opposed to the gate region to define a channel thereon, the channel region layer being composed of an undoped amorphous silicon single layer and having a thickness less than 1000 Å so as to effectively limit the generation of photoelectric current therein caused by light incident on the channel region; and drain and source regions disposed separately from each other in contact with the top portion of the channel region for supplying a drive current to the channel region, the drain and source regions each being comprised of a semi-conductive layer in contact with the channel region and an electrode layer on the semi-conductive layer.

Claim 5

A thin film transistor for driving a picture element of an active matrix type display device, comprising: a substrate; a gate region disposed on the substrate; an insulating layer disposed on the gate region; a channel region layer disposed on the insulating layer and opposed to the gate region to define a channel thereon, the channel region layer being composed of an undoped amorphous silicon single layer and having a thickness less than 1000 Å so as to effectively limit the generation of photoelectric current therein caused by light incident on the channel region; and drain and source regions disposed separately from each other in contact with the top portion of the channel region for supplying a drive current to the channel region, the drain and source regions each being comprised of a semi-conductive layer in contact with the channel region and an electrode layer on the semi-conductive layer.

Claim 6

A thin film transistor according to claim 3; wherein the insulating layer is composed of SiN.

Claim 7

A thin film transistor according to claim 3; wherein the drain and source regions further comprise an intermediate metal layer disposed between the semi-conductive layer and the electrode layer, the intermediate metal layer being composed of high-melting point metal.

Claim 8

A thin film transistor according to claim 5; wherein the electrode layer is composed of Al and the intermediate metal layer is composed of Cr or Mo.

Claim 9

A thin film transistor according to claim 3; wherein the active matrix type display device comprises a liquid crystal display device.

Claim 10

A thin film transistor according to claim 3; wherein the top portion of the channel region is free of a light-shielding layer.