thin film transistor

Abstract

Abstract PURPOSE:To obtain the titled element which can well shield light to amorphous Si and can be formed in a small number of processes, by a method wherein the active region of an element having an amorphous Si layer as the active region is provided by arrangement in the light shielding film which has been formed in the upper surface by sandwiching an insulation film. CONSTITUTION:A gate electrode 2 is formed on a transparent insulation substrate 1 by Cr evaporation and patterning. Next, an Si nitride film is deposited and patterned into a gate insulation film 3. Then, Al and Cr are deposited in this order by vacuum evaporation and patterned into source-drain electrodes 14a and 14b. A low-resistance N type amorphous Si film 15 is deposited thereon. After the N type amorphous Si film between the source and drain electrodes is removed by CF4 plasma etching, an amorphous Si film 16 is deposited thereon by SiH4 glow discharge; further, an Si nitride film is formed as the channel protection film 17. A Cr film is evaporated thereon and patterned as the light shielding film 18; moreover, the channel and the amorphous Si film are etched by using this pattern as a mask.

Inventors

• 👤 Yoshiyuki Kaneko
• 👤 好之 金子
• 👤 Koichi Seki
• 👤 浩一 関
• 👤 Akira Sasano
• 👤 笹野　晃
• 👤 Toshihisa Tsukada
• 👤 俊久 塚田

Bibliographic Details