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US6337231B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method for producing semiconductor device

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2000-03-22
•
Granted: 2002-01-08
•
Expires: 2020-03-22
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Abstract

Abstract A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting, catalyst is introduced.

Inventors

  • 👤 Hongyong Zhang
  • 👤 Yasuhiko Takemura
  • 👤 Toru Takayama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 10:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/3822; H10P14/3816

Claims Analysis

Total Claims: 30
Claim 1
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a metal element in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the metal element to form a crystalline semiconductor film.
Claim 2
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a metal element in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the metal element to form a crystalline semiconductor film.
Claim 3
Dependent Claim 26 words
A method according to claim 1 , wherein the metal element comprises at least one selected from the group consisting of Ni, Co, Pd and Pt.
Claim 4
Dependent Claim 31 words
A method according to claim 1 , the metal element is included in the semiconductor film at a concentration in a range of 1×10 15 to 5×10 19 cm −3 .
Claim 5
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film.
Claim 6
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film.
Claim 7
Dependent Claim 14 words
A method according to claim 4 , wherein the catalytic material comprises nickel silicide.
Claim 8
Dependent Claim 22 words
A method according to claim 4 , wherein the catalytic material has a thickness in a range of 5 to 200 Å.
Claim 9
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a metal silicide in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the metal silicide to form a crystalline semiconductor film.
Claim 10
Independent Claim 54 words
A method of fabricating a semiconductor device, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a metal silicide in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the metal silicide to form a crystalline semiconductor film.
Claim 11
Dependent Claim 14 words
A method according to claim 7 , wherein the metal silicide comprises nickel silicide.
Claim 12
Dependent Claim 22 words
A method according to claim 7 , wherein the metal silicide has a thickness in a range of 5 to 200 Å.
Claim 13
Independent Claim 90 words
A method of fabricating a semiconductor device including a thin film transistor, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an impurity into the crystalline semiconductor film to form a pair of impurity regions.
Claim 14
Independent Claim 90 words
A method of fabricating a semiconductor device including a thin film transistor, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an impurity into the crystalline semiconductor film to form a pair of impurity regions.
Claim 15
Dependent Claim 14 words
A method according to claim 10 , wherein the catalytic material comprises nickel silicide.
Claim 16
Dependent Claim 22 words
A method according to claim 10 , wherein the catalytic material has a thickness in a range of 5 to 200 Å.
Claim 17
Dependent Claim 26 words
A method according to claim 10 , wherein the catalytic material comprises at least one selected from the group consisting of Ni, Co, Pd and Pt.
Claim 18
Dependent Claim 31 words
A method according to claim 10 , the catalytic material is included in the semiconductor film at a concentration in a range of 1×10 15 to 5×10 19 cm −3 .
Claim 19
Independent Claim 120 words
A method of fabricating a semiconductor device including a CMOS structure having an n-channel thin film transistor and a p-channel thin film transistor, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an n-type impurity into the crystalline semiconductor film to form a pair of n-type impurity regions; introducing a p-type impurity into the crystalline semiconductor film to form a pair of p-type impurity regions.
Claim 20
Independent Claim 120 words
A method of fabricating a semiconductor device including a CMOS structure having an n-channel thin film transistor and a p-channel thin film transistor, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an n-type impurity into the crystalline semiconductor film to form a pair of n-type impurity regions; introducing a p-type impurity into the crystalline semiconductor film to form a pair of p-type impurity regions.
Claim 21
Dependent Claim 14 words
A method according to claim 15 , wherein the catalytic material comprises nickel silicide.
Claim 22
Dependent Claim 22 words
A method according to claim 15 , wherein the catalytic material has a thickness in a range of 5 to 200 Å.
Claim 23
Dependent Claim 26 words
A method according to claim 15 , wherein the catalytic material comprises at least one selected from the group consisting of Ni, Co, Pd and Pt.
Claim 24
Dependent Claim 31 words
A method according to claim 15 , the catalytic material is included in the semiconductor film at a concentration in a range of 1×10 15 to 5×10 19 cm −3 .
Claim 25
Dependent Claim 19 words
A method according to claim 15 , wherein the n-type impurity is phosphorus while the p-type impurity is boron.
Claim 26
Independent Claim 134 words
A method of fabricating an active matrix type display device including at least an n-type thin film transistor as a switching element, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an n-type impurity into the crystalline semiconductor film to form a source region and a drain region; forming an interlayer insulating film over the n-channel thin film transistor; forming a pixel electrode over the interlayer insulating film being electrically connected to one of the source and drain regions.
Claim 27
Independent Claim 134 words
A method of fabricating an active matrix type display device including at least an n-type thin film transistor as a switching element, said method comprising the steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface; adding a catalytic material in contact with the amorphous semiconductor film through a sputtering method; crystallizing the amorphous semiconductor film using the catalytic material to form a crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with a gate insulating film therebetween; introducing an n-type impurity into the crystalline semiconductor film to form a source region and a drain region; forming an interlayer insulating film over the n-channel thin film transistor; forming a pixel electrode over the interlayer insulating film being electrically connected to one of the source and drain regions.
Claim 28
Dependent Claim 14 words
A method according to claim 21 , wherein the catalytic material comprises nickel suicide.
Claim 29
Dependent Claim 22 words
A method according to claim 21 , wherein the catalytic material has a thickness in a range of 5 to 200 Å.
Claim 30
Dependent Claim 19 words
A method according to claim 21 , wherein the active matrix display device is a liquid crystal display device.

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Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-01-07 2005-07-09 2006-01-08 $2000.00 Window Closed / Lapsed
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