US5614733A
Expired / Lapsed
US
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Semiconductor device having crystalline thin film transistors
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-12-12
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Granted: 1997-03-25
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Expires: 2014-12-12
Abstract
Abstract A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:35
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P; H10P10/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
91 words
A semiconductor circuit comprising: a monolithic circuit provided on a substrate and comprising an active-matrix circuit and a peripheral driver circuit; a transistor provided in said peripheral driver circuit and having an active region containing at least one catalytic element at a concentration of 1×10 15 to 1×10 19 cm -3 ; and a transistor provided in said active-matrix circuit and having an active region containing said at least one catalytic element at a concentration lower than that of said active region of said transistor provided in said peripheral driver circuit.
Claim 2
Dependent Claim
91 words
A semiconductor circuit comprising: a monolithic circuit provided on a substrate and comprising an active-matrix circuit and a peripheral driver circuit; a transistor provided in said peripheral driver circuit and having an active region containing at least one catalytic element at a concentration of 1×10 15 to 1×10 19 cm -3 ; and a transistor provided in said active-matrix circuit and having an active region containing said at least one catalytic element at a concentration lower than that of said active region of said transistor provided in said peripheral driver circuit.
Claim 3
Dependent Claim
37 words
The circuit of claim 1 wherein said at least one catalytic element in said active region of said transistor provided in said peripheral driver circuit has a concentration of 1×10 16 to 5×10 17 cm -3 .
Claim 4
Dependent Claim
35 words
The circuit of claim 1 wherein said at least one catalytic element in said active region of said transistor provided in said active-matrix circuit has a concentration of less than 1×10 15 cm -3 .
Claim 5
Dependent Claim
22 words
The circuit of claim 1 wherein said at least one catalytic element is at least one of nickel, iron, cobalt, and platinum.
Claim 6
Dependent Claim
22 words
The circuit of claim 1 wherein said concentration of said at least one catalytic element is defined by values measured by SIMS.
Claim 7
Dependent Claim
128 words
A semiconductor circuit including at least an active matrix circuit and a peripheral circuit for driving said active matrix circuit, said semiconductor circuit comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate for forming said active matrix circuit, each of which has an active region comprising a crystalline silicon semiconductor; and a second plurality of thin film transistors formed on said substrate for forming said peripheral circuit, each of which has an active region comprising a crystalline semiconductor, wherein the active region of said second plurality of thin film transistors contains a metal element selected from the group consisting of nickel, iron, cobalt and platinum while the active region of said first plurality of thin film transistors do not.
Claim 8
Dependent Claim
128 words
A semiconductor circuit including at least an active matrix circuit and a peripheral circuit for driving said active matrix circuit, said semiconductor circuit comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate for forming said active matrix circuit, each of which has an active region comprising a crystalline silicon semiconductor; and a second plurality of thin film transistors formed on said substrate for forming said peripheral circuit, each of which has an active region comprising a crystalline semiconductor, wherein the active region of said second plurality of thin film transistors contains a metal element selected from the group consisting of nickel, iron, cobalt and platinum while the active region of said first plurality of thin film transistors do not.
Claim 9
Dependent Claim
31 words
The semiconductor circuit of claim 6 wherein the active region of said second plurality of thin film transistors has a higher carrier mobility than said first plurality of thin film transistors.
Claim 10
Dependent Claim
30 words
The semiconductor circuit of claim 6 wherein the active region of said second plurality of thin film transistors has a higher crystallinity than said first plurality of thin film transistors.
Claim 11
Dependent Claim
134 words
A semiconductor circuit including at least an active matrix circuit and a peripheral circuit for driving said active matrix circuit, said semiconductor circuit comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate for forming said active matrix circuit, each of which has an active region comprising a crystalline silicon semiconductor; and a second plurality of thin film transistors formed on said substrate for forming said peripheral circuit, each of which has an active region comprising a crystalline semiconductor, wherein the active region of said second plurality of thin film transistors contains a metal element selected from the group consisting of nickel, iron, cobalt and platinum at a higher concentration than the active region of said first plurality of thin film transistors contains said metal element.
Claim 12
Dependent Claim
134 words
A semiconductor circuit including at least an active matrix circuit and a peripheral circuit for driving said active matrix circuit, said semiconductor circuit comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate for forming said active matrix circuit, each of which has an active region comprising a crystalline silicon semiconductor; and a second plurality of thin film transistors formed on said substrate for forming said peripheral circuit, each of which has an active region comprising a crystalline semiconductor, wherein the active region of said second plurality of thin film transistors contains a metal element selected from the group consisting of nickel, iron, cobalt and platinum at a higher concentration than the active region of said first plurality of thin film transistors contains said metal element.
Claim 13
Dependent Claim
30 words
The semiconductor circuit of claim 9 wherein the active region of said second plurality of thin film transistor has a higher mobility than said first plurality of thin film transistors.
Claim 14
Dependent Claim
30 words
The semiconductor circuit of claim 10 wherein the active region of said second plurality of thin film transistors has a higher crystallinity than said first plurality of thin film transistors.
Claim 15
Dependent Claim
69 words
A semiconductor device comprising: a first thin film transistor having a first channel semiconductor region on a substrate; and a second thin film transistor having a second channel semiconductor region on said substrate, both of said first and second channel semiconductor regions having a crystallinity; wherein a concentration of a catalyst metal contained in said first channel semiconductor region is larger than that in said second channel semiconductor region.
Claim 16
Dependent Claim
69 words
A semiconductor device comprising: a first thin film transistor having a first channel semiconductor region on a substrate; and a second thin film transistor having a second channel semiconductor region on said substrate, both of said first and second channel semiconductor regions having a crystallinity; wherein a concentration of a catalyst metal contained in said first channel semiconductor region is larger than that in said second channel semiconductor region.
Claim 17
Dependent Claim
34 words
The semiconductor device of claim 12 wherein a ratio of the concentration of said catalyst metal in said first channel semiconductor region to that in said second channel semiconductor region is ten or more.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |