US5639698A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor, semiconductor device, and method for fabricating the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-02-15
•
Granted: 1997-06-17
•
Expires: 2014-02-15
Abstract
Abstract Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Hideki Uochi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6757; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 70
Claim 1
Independent Claim
110 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing the semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 2
Independent Claim
110 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing the semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein a proportion of said chlorine containing gas with respect to said atmosphere is from 1 to 10%.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor film is substantially amorphous before said heating.
Claim 5
Dependent Claim
27 words
The method of claim 1 wherein the substrate comprises a glass and said heating is conducted at a temperature lower than a transition point of said glass.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said heating step is carried out at a temperature of 450° to 650° C.
Claim 7
Independent Claim
111 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing said semiconductor film after said heating in an atmosphere containing oxygen mixed with a chlorine containing gas in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 8
Independent Claim
111 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing said semiconductor film after said heating in an atmosphere containing oxygen mixed with a chlorine containing gas in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 9
Dependent Claim
23 words
The method of claim 6 wherein a proportion of said chlorine containing gas with respect to said atmosphere is from 1 to 10%.
Claim 10
Dependent Claim
15 words
The method of claim 6 wherein said semiconductor film is substantially amorphous before said heating.
Claim 11
Dependent Claim
27 words
The method of claim 6 wherein the substrate comprises a glass and said heating is conducted at a temperature lower than a transition point of said glass.
Claim 12
Dependent Claim
20 words
The method of claim 6 wherein said heating step is carried out at a temperature of 450° to 650° C.
Claim 13
Dependent Claim
19 words
The method of claim 1 wherein said annealing is conducted at a temperature in a range of 450°-650° C.
Claim 14
Dependent Claim
15 words
The method of claim 1 wherein said catalytic material comprises a silicide of said metal.
Claim 15
Dependent Claim
15 words
The method of claim 1 wherein said catalytic material comprises a compound including said metal.
Claim 16
Dependent Claim
19 words
The method of claim 1 wherein said catalytic material is in the form of a film, particles, or clusters.
Claim 17
Dependent Claim
13 words
The method of claim 1 wherein said chlorine containing gas comprises hydrogen chloride.
Claim 18
Dependent Claim
83 words
The method of claim 1 wherein said chlorine containing gas comprises a material selected from the group consisting of CH 3 Cl, CH 2 Cl 2 , CHCl 3 , C 2 H 5 Cl, C 2 H 4 Cl 2 , C 2 H 3 Cl 3 , C 2 H 2 Cl 4 , C 5 HCl 5 , C 2 H 3 Cl, C 2 H 2 Cl 2 , C 2 HCl 3 and C 2 HCl 3 .
Claim 19
Dependent Claim
16 words
The method of claim 1 wherein said semiconductor film after said heating has a polycrystal structure.
Claim 20
Dependent Claim
22 words
The method of claim 1 wherein said semiconductor device is a thin film transistor having a channel region comprising said semiconductor film.
Claim 21
Dependent Claim
19 words
The method of claim 6 wherein said annealing is conducted at a temperature in a range of 450°-650° C.
Claim 22
Dependent Claim
15 words
The method of claim 6 wherein said catalytic material comprises a silicide of said metal.
Claim 23
Dependent Claim
15 words
The method of claim 6 wherein said catalytic material comprises a compound including said metal.
Claim 24
Dependent Claim
19 words
The method of claim 6 wherein said catalytic material is in the form of a film, particles, or clusters.
Claim 25
Dependent Claim
13 words
The method of claim 6 wherein said chlorine containing gas comprises hydrogen chloride.
Claim 26
Dependent Claim
83 words
The method of claim 6 wherein said chlorine containing gas comprises a material selected from the group consisting of CH 3 Cl, CH 2 Cl 2 , CHCl 3 , C 2 H 5 Cl, C 2 H 4 Cl 2 , C 2 H 3 Cl 3 , C 2 H 2 Cl 4 , C 5 HCl 5 , C 2 H 3 Cl, C 2 H 2 Cl 2 , C 2 HCl 3 and C 2 HCl 3 .
Claim 27
Dependent Claim
16 words
The method of claim 6 wherein said semiconductor film after said heating has a polycrystal structure.
Claim 28
Dependent Claim
22 words
The method of claim 6 wherein said semiconductor device is a thin film transistor having a channel region comprising said semiconductor film.
Claim 29
Independent Claim
111 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing said semiconductor film after said heating in an atmosphere containing hydrogen mixed with a chlorine containing gas in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 30
Independent Claim
111 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing said semiconductor film after said heating in an atmosphere containing hydrogen mixed with a chlorine containing gas in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 31
Dependent Claim
23 words
The method of claim 27 wherein a proportion of said chlorine containing gas with respect to said atmosphere is from 1 to 10%.
Claim 32
Dependent Claim
15 words
The method of claim 27 wherein said semiconductor film is substantially amorphous before said heating.
Claim 33
Dependent Claim
27 words
The method of claim 27 wherein the substrate comprises a glass and said heating is conducted at a temperature lower than a transition point of said glass.
Claim 34
Dependent Claim
20 words
The method of claim 27 wherein said heating step is carried out at a temperature of 450° to 650° C.
Claim 35
Dependent Claim
19 words
The method of claim 27 wherein said annealing is conducted at a temperature in a range of 450°-650° C.
Claim 36
Dependent Claim
15 words
The method of claim 27 wherein said catalytic material comprises a silicide of said metal.
Claim 37
Dependent Claim
15 words
The method of claim 27 wherein said catalytic material comprises a compound including said metal.
Claim 38
Dependent Claim
19 words
The method of claim 27 wherein said catalytic material is in the form of a film, particles, or clusters.
Claim 39
Dependent Claim
13 words
The method of claim 27 wherein said chlorine containing gas comprises hydrogen chloride.
Claim 40
Dependent Claim
83 words
The method of claim 27 wherein aid chlorine containing gas comprises a material selected from the group consisting of CH 3 Cl, CH 2 Cl 2 , CHCl 3 , C 2 H 5 Cl, C 2 H 4 Cl 2 , C 2 H 3 Cl 3 , C 2 H 2 Cl 4 , C 5 HCl 5 , C 2 H 3 Cl, C 2 H 2 Cl 2 , C 2 HCl 3 and C 2 HCl 3 .
Claim 41
Dependent Claim
16 words
The method of claim 27 wherein said semiconductor film after said heating has a polycrystal structure.
Claim 42
Dependent Claim
22 words
The method of claim 27 wherein said semiconductor device is a thin film transistor having a channel region comprising said semiconductor film.
Claim 43
Independent Claim
135 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; and heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; irradiating said semiconductor film with light in order to further crystallize said semiconductor film after said heating, wherein said method further comprises a step of annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 44
Independent Claim
135 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; and heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; irradiating said semiconductor film with light in order to further crystallize said semiconductor film after said heating, wherein said method further comprises a step of annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 45
Dependent Claim
23 words
The method of claim 40 wherein a proportion of said chlorine containing gas with respect to said atmosphere is from 1 to 10%.
Claim 46
Dependent Claim
15 words
The method of claim 40 wherein said semiconductor film is substantially amorphous before said heating.
Claim 47
Dependent Claim
27 words
The method of claim 40 wherein the substrate comprises a glass and said heating is conducted at a temperature lower than a transition point of said glass.
Claim 48
Dependent Claim
20 words
The method of claim 40 wherein said heating step is carried out at a temperature of 450° to 650° C.
Claim 49
Dependent Claim
19 words
The method of claim 40 wherein said annealing is conducted at a temperature in a range of 450°-650° C.
Claim 50
Dependent Claim
15 words
The method of claim 40 wherein said catalytic material comprises a silicide of said metal.
Claim 51
Dependent Claim
15 words
The method of claim 40 wherein said catalytic material comprises a compound including said metal.
Claim 52
Dependent Claim
19 words
The method of claim 40 wherein said catalytic material is in the form of a film, particles, or clusters.
Claim 53
Dependent Claim
13 words
The method of claim 40 wherein said chlorine containing gas comprises hydrogen chloride.
Claim 54
Dependent Claim
84 words
The method of claim 40 wherein said chlorine containing gas comprises a material selected from the group consisting of CH 3 Cl, CH 2 Cl 2 , CHCl 3 , C 2 H 5 Cl, C 2 H 4 Cl 2 , C 2 H 3 Cl 3 , C 2 H 2 Cl 4 , C 5 HCl 5 , C 2 H 3 Cl, C 2 H 2 Cl 2 , C 2 HCl 3 , and C 2 HCl 3 .
Claim 55
Dependent Claim
16 words
The method of claim 40 wherein said semiconductor film after said heating has a polycrystal structure.
Claim 56
Dependent Claim
22 words
The method of claim 40 wherein said semiconductor device is a thin film transistor having a channel region comprising said semiconductor film.
Claim 57
Dependent Claim
14 words
The method of claim 40 wherein said irradiating is carried out by using laser.
Claim 58
Dependent Claim
15 words
The method of claim 40 wherein said irradiating is carried out by rapid thermal annealing.
Claim 59
Dependent Claim
12 words
The method of claim 40 wherein said atmosphere includes an oxygen gas.
Claim 60
Dependent Claim
12 words
The method of claim 40 wherein said atmosphere includes a hydrogen gas.
Claim 61
Independent Claim
140 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with only a selected region of said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film wherein crystals grow through another region of said semiconductor film adjacent to said selected region in a direction parallel with a surface of said substrate; and annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 62
Independent Claim
140 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with only a selected region of said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film wherein crystals grow through another region of said semiconductor film adjacent to said selected region in a direction parallel with a surface of said substrate; and annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 63
Dependent Claim
12 words
The method of claim 57 wherein said atmosphere includes an oxygen gas.
Claim 64
Dependent Claim
12 words
The method of claim 57 wherein said atmosphere includes a hydrogen gas.
Claim 65
Independent Claim
166 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with only a selected region of said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film wherein crystals grow through another region of said semiconductor film adjacent to said selected region in a direction parallel with a surface of said substrate; and irradiating said semiconductor film with light in order to further crystallize said semiconductor film after said heating, wherein said method further comprises a step of annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film and wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 66
Independent Claim
166 words
A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with only a selected region of said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film wherein crystals grow through another region of said semiconductor film adjacent to said selected region in a direction parallel with a surface of said substrate; and irradiating said semiconductor film with light in order to further crystallize said semiconductor film after said heating, wherein said method further comprises a step of annealing said semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film and wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 67
Dependent Claim
12 words
The method of claim 60 wherein said atmosphere includes an oxygen gas.
Claim 68
Dependent Claim
12 words
The method of claim 60 wherein said atmosphere includes a hydrogen gas.
Claim 69
Dependent Claim
12 words
The method of claim 60 wherein said light is a laser light.
Claim 70
Dependent Claim
10 words
The method of claim 60 wherein said irradiating is RTA.
References Cited (Backward Citations)
JPS6233417A
Cited
US5010037A
Cited
US5147826A
Cited
JPH0558789A
Cited
JPH05190020A
Cited
US5275851A
Cited
US5422311A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-16 | 2000-12-16 | 2001-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-16 | 2004-12-16 | 2005-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-16 | 2008-12-16 | 2009-06-17 | $7700.00 | Window Closed / Lapsed |