US5010037A
Expired / Lapsed
US
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Pinhole-free growth of epitaxial CoSi2 film on Si(111)
Assignee: California Institute of Technology
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Filing: 1988-10-14
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Granted: 1991-04-23
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Expires: 2008-10-14
Abstract
Abstract Pinhole-free epitaxial CoSi2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500 DEG to 750 DEG C.
Inventors
- 👤 True-Lon Lin
- 👤 Robert W. Fathauer
- 👤 Paula J. Grunthaner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
A process for epitaxially growing substantially pinhole-free crystalline films of CoSi 2 on silicon substrates comprising: (a) codepositing at ambient temperature silicon and cobalt atoms in substantially stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si in a 1:2 mixture; (b) depositing at ambient temperature a layer of amorphous silicon on said amorphous film to form a composite structure; and (c) annealing said composite structure at a temperature ranging from about 500° to 750° C. to form said crystalline film of CoSi 2 capped with crystalline silicon.
Claim 2
Dependent Claim
94 words
A process for epitaxially growing substantially pinhole-free crystalline films of CoSi 2 on silicon substrates comprising: (a) codepositing at ambient temperature silicon and cobalt atoms in substantially stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si in a 1:2 mixture; (b) depositing at ambient temperature a layer of amorphous silicon on said amorphous film to form a composite structure; and (c) annealing said composite structure at a temperature ranging from about 500° to 750° C. to form said crystalline film of CoSi 2 capped with crystalline silicon.
Claim 3
Dependent Claim
22 words
The process of claim 1 wherein said CoSi 2 film is deposited to a thickness ranging from about 1 to 150 nm.
Claim 4
Dependent Claim
22 words
The process of claim 2 where said CoSi 2 film is deposited to a thickness ranging from about 5 to 10 nm.
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein said amorphous silicon layer is deposited to a thickness ranging from about 0.5 to 2 nm.
Claim 6
Dependent Claim
22 words
The process of claim 4 wherein said amorphous silicon layer is deposited to a thickness ranging from about 1 to 2 nm.
Claim 7
Dependent Claim
20 words
The process of claim 1 wherein said annealing is performed for a time ranging from about 1 to 60 minutes.
Claim 8
Dependent Claim
20 words
The process of claim 6 wherein said annealing is performed for a time ranging from about 10 to 20 minutes.
Claim 9
Dependent Claim
20 words
The process of claim 1 wherein said annealing is performed at a temperature ranging from about 550° to 600° C.
Claim 10
Dependent Claim
112 words
A process for epitaxially growing substantially pinhole-free films of CoSi 2 on silicon substrates consisting of: (a) codepositing at room temperature silicon and cobalt atoms in stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si having a thickness ranging from about 1 to 150 nm; (b) depositing at room temperature a layer of amorphous silicon on said amorphous film of Co/Si to form a composite structure, said amorphous silicon film having a thickness ranging from about 0.5 to 2 nm; and (c) annealing said composite structure at a temperature ranging from about 500° to 750° C. for a time of about 1 to 60 min.
Claim 11
Dependent Claim
112 words
A process for epitaxially growing substantially pinhole-free films of CoSi 2 on silicon substrates consisting of: (a) codepositing at room temperature silicon and cobalt atoms in stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si having a thickness ranging from about 1 to 150 nm; (b) depositing at room temperature a layer of amorphous silicon on said amorphous film of Co/Si to form a composite structure, said amorphous silicon film having a thickness ranging from about 0.5 to 2 nm; and (c) annealing said composite structure at a temperature ranging from about 500° to 750° C. for a time of about 1 to 60 min.
Claim 12
Dependent Claim
22 words
The process of claim 9 where said CoSi 2 film is deposited to a thickness ranging from about 5 to 10 nm.
Claim 13
Dependent Claim
22 words
The process of claim 9 wherein said amorphous silicon layer is deposited to a thickness ranging from about 1 to 2 nm.
Claim 14
Dependent Claim
20 words
The process of claim 9 wherein said annealing is performed for a time ranging from about 10 to 20 minutes.
Claim 15
Dependent Claim
20 words
The process of claim 9 wherein said annealing is performed at a temperature ranging from about 550° to 600° C.
Claim 16
Dependent Claim
111 words
A process for epitaxially growing substantially pinhole-free films of CoSi 2 on silicon substrates consisting of: (a) codepositing at room temperature silicon and cobalt atoms in stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si having a thickness ranging from about 5 to 10 nm; (b) depositing at room temperature a layer of amorphous silicon on said amorphous film of Co/Si to form a composite structure, said amorphous film having a thickness ranging from about 1 to 2 nm; and (c) annealing said composite structure at a temperature ranging from about 550° to 600° C. for a time of about 10 to 20 min.
Claim 17
Dependent Claim
111 words
A process for epitaxially growing substantially pinhole-free films of CoSi 2 on silicon substrates consisting of: (a) codepositing at room temperature silicon and cobalt atoms in stoichiometric ratio on a major surface of said substrate to form an amorphous film of Co/Si having a thickness ranging from about 5 to 10 nm; (b) depositing at room temperature a layer of amorphous silicon on said amorphous film of Co/Si to form a composite structure, said amorphous film having a thickness ranging from about 1 to 2 nm; and (c) annealing said composite structure at a temperature ranging from about 550° to 600° C. for a time of about 10 to 20 min.
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