US4492971A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal silicide-silicon heterostructures
Assignee: Nokia Bell Labs
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Filing: 1980-06-05
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Granted: 1985-01-08
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Expires: 2000-06-05
Abstract
Abstract Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.
Inventors
- 👤 John C. Bean
- 👤 Kin-Chung R. Chiu
- 👤 John M. Poate
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D8/00; H10D8/60
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
45 words
Article comprising a composite structure of: a single crystal silicon substrate, a single crystal metal silicide layer overlying the silicon substrate, and a single crystal silicon layer overlying the metal silicide, said composite structure having an essentially continuous single crystal lattice between the three layers.
Claim 2
Dependent Claim
45 words
Article comprising a composite structure of: a single crystal silicon substrate, a single crystal metal silicide layer overlying the silicon substrate, and a single crystal silicon layer overlying the metal silicide, said composite structure having an essentially continuous single crystal lattice between the three layers.
Claim 3
Dependent Claim
27 words
Article comprising a composite structure of alternating layers of silicon and a metal silicide, said composite structure having a continuous single crystal lattice between said alternating layers.
Claim 4
Dependent Claim
27 words
Article comprising a composite structure of alternating layers of silicon and a metal silicide, said composite structure having a continuous single crystal lattice between said alternating layers.
Claim 5
Dependent Claim
17 words
Article of claim 1 or 2 in which the metal silicide is nickel silicide or cobalt silicide.
Claim 6
Dependent Claim
61 words
Device comprising: a single crystal silicon substrate, a single crystal metal silicide layer overlying the silicon substrate, a single crystal silicon layer overlying the metal silicide layer, said substrate, metal silicide layer and silicon layer forming a composite structure with a continuous crystal lattice between the layers, and means electrically contacting the substrate, the metal silicide layer and the silicon layer.
Claim 7
Dependent Claim
61 words
Device comprising: a single crystal silicon substrate, a single crystal metal silicide layer overlying the silicon substrate, a single crystal silicon layer overlying the metal silicide layer, said substrate, metal silicide layer and silicon layer forming a composite structure with a continuous crystal lattice between the layers, and means electrically contacting the substrate, the metal silicide layer and the silicon layer.
Claim 8
Dependent Claim
20 words
An optical device comprising the article of claim 2 in combination with means for directing light radiation on said article.
Claim 9
Dependent Claim
17 words
Device of claim 4 or 5 in which the metal silicide is nickel silicide or cobalt silicide.
Claim 10
Dependent Claim
58 words
Article comprising a composite structure comprising a single crystal silicon substrate and a single crystal metal silicide layer overlying the substrate, with the metal silicide having χ min no larger than 10%, where χ min is the ratio of Rutherford backscattering yield for the channeling direction substantially normal to the layer to the yield in a random direction.
Claim 11
Dependent Claim
58 words
Article comprising a composite structure comprising a single crystal silicon substrate and a single crystal metal silicide layer overlying the substrate, with the metal silicide having χ min no larger than 10%, where χ min is the ratio of Rutherford backscattering yield for the channeling direction substantially normal to the layer to the yield in a random direction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-08 | 1988-07-09 | 1989-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-08 | 1992-07-09 | 1993-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-08 | 1996-07-09 | 1997-01-08 | $7700.00 | Window Closed / Lapsed |